DMC25D1UVT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
Low On-Resistance
I
D
Device V R
(BR)DSS DS(ON)
T = +25C Low Input Capacitance
A
Fast Switching Speed
Q1 25V 4 @ V = 4.5V 0.5A
GS
Low Input/Output Leakage
55m @ V = -4.5V -3.9A
GS
Q2 -12V
ESD Protected Gate
70m @ V = -2.5V -3.5A
GS
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET is designed to minimize the on-state
Mechanical Data
resistance (R ) and yet maintain superior switching performance,
DS(ON)
making it ideal for high efficiency power management applications. Case: TSOT26
Case Material: Molded Plastic, Green Molding Compound.
UL Flammability Classification Rating 94V-0
Applications
Moisture Sensitivity: Level 1 per J-STD-020
DC-DC Converters
Terminal Connections: See Diagram
Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Load Switch
Weight: 0.013 grams (Approximate)
D1 D2
Q2
Vin, R1 Vout, C1
TSOT26 4 3
5 2
ON/OFF Vout, C1
G1 G2
Q1
R1, C1 6 1 R2
Gate Protection
Gate Protection
S1 S2
Diode Diode
Top View
Top View
Q1 N-Channel MOSFET Q2 P-Channel MOSFET
Internal circuit
Ordering Information (Note 4)
Part Number Case Packaging
DMC25D1UVT-7 TSOT26 3000 / Tape & Reel
DMC25D1UVT-13 TSOT26 10000 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMC25D1UVT
Maximum Ratings Q1 (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage 25 V
V
DSS
-0.5
Gate-Source Voltage V
V
GSS
+8
0.5 A
Continuous Drain Current (Note 5) V = 4.5V I
GS D
Maximum Continuous Body Diode Forward Current (Note 6) I 1.2 A
S
Pulsed Drain Current (Note 6) I 1.5 A
DM
Maximum Ratings Q2 (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V -12 V
DSS
Gate-Source Voltage V 8 V
GSS
Steady State -3.9 A
Continuous Drain Current (Note 5) V = -4.5V
GS
Note 9 -17.4 A
I
D
Continuous Drain Current (Note 5) V = -2.5V -2.82 A
GS
Maximum Continuous Body Diode Forward Current (Note 6) I -40 A
S
Pulsed Drain Current (Note 6) -40 A
I
DM
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) 1.3 W
P
D
Steady State 100
Thermal Resistance, Junction to Ambient (Note 5) R C/W
JA
Note 9 5
Thermal Resistance, Junction to Case (Note 5) 36 C/W
R
JC
Operating and Storage Temperature Range -55 to +150 C
T , T
J STG
Electrical Characteristics Q1 (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage 25 V
BV V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current 1 A
I V = 20V, V = 0V
DSS DS GS
Gate-Source Leakage I 100 nA V = 8V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V 0.65 0.85 1.5 V V = V , I = 250A
GS(TH) DS GS D
Static Drain-Source On-Resistance R 3.8 4 V = 4.5V, I = 0.4A
DS(ON) GS D
Diode Forward Voltage V 0.76 1.2 V V = 0V, I = 0.29A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
27.6
Input Capacitance C
iss
V = 10V, V = 0V,
DS GS
8.5
Output Capacitance pF
Coss
f = 1.0MHz
3.3
Reverse Transfer Capacitance
C
rss
Gate Resistance 25
R V = 0V, V = 0V, f = 1MHz
g DS GS
0.4
Total Gate Charge (V = 4.5V) Q
GS g
0.9
Total Gate Charge (V = 10V) Q
GS g
nC V = 5V, I = 0.2A
DS D
Gate-Source Charge 0.1
Q
gs
0.04
Gate-Drain Charge Q
gd
2.5
Turn-On Delay Time t
D(ON)
1.4
Turn-On Rise Time t
R V = 4.5V, V = 6V,
GS DS
ns
5.7
Turn-Off Delay Time t R = 50, I = 0.5A
D(OFF) G D
4.3
Turn-Off Fall Time t
F
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1in. square copper plate.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
9. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
2 of 9
April 2015
DMC25D1UVT
www.diodes.com Diodes Incorporated
Document number: DS37507 Rev. 2 - 2
ADAVDAVNACNECDE I NINFFOORRMMAATTIOIONN
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