DMC2710UDW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D MAX Device BV R DSS DS(on) MAX Low Gate Threshold Voltage T = +25C A Low Input Capacitance 0.45 V = 4.5V 0.75A GS Fast Switching Speed Q1 20V 0.65A 0.6 V = 2.5V Low Input/Output Leakage GS Complementary Pair MOSFET -0.6A 0.75 V = -4.5V GS Q2 -20V Ultra-Small Surface Mount Package -0.5A 1.05 V = -2.5V GS ESD-Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control Description (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please This new generation MOSFET is designed to minimize on-state contact us or your local Diodes representative. resistance (R ), yet maintain superior switching performance, DS(on) DMC2710UDW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Q1 Value Q2 Value Unit Drain-Source Voltage V 20 -20 V DSS Gate-Source Voltage V 6 6 V GSS Continuous Drain Current (Note 6) T = +25C 0.75 -0.6 A N-Channel: V = 4.5V Steady State A GS I D 0.6 -0.47 T = +70C A P-Channel: V = -4.5V GS 0.5 -0.4 A Maximum Continuous Body Diode Forward Current (Note 6) I S 5 -2.5 A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 0.29 W T = +25C P A D Steady State Thermal Resistance, Junction to Ambient (Note 5) 433 C/W R JA Total Power Dissipation (Note 6) 0.38 W T = +25C P A D Steady State Thermal Resistance, Junction to Ambient (Note 6) R 325 C/W JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics N-CHANNEL Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 100 nA V =20V, V = 0V C DSS DS GS Gate-Source Leakage I 1.0 A V = 4.5V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.5 1.0 V V = V , I = 250A GS(th) DS GS D 0.18 0.45 VGS = 4.5V, ID = 600mA Static Drain-Source On-Resistance 0.21 0.6 R V = 2.5V, I = 500mA DS(on) GS D 0.26 0.75 V = 1.8V, I = 350mA GS D 0.7 Diode Forward Voltage (Note 7) V 1.2 V V = 0V, I = 150mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 42 pF C iss V = 16V, V = 0V DS GS 13 Output Capacitance C pF oss f = 1.0MHz 6.5 Reverse Transfer Capacitance C pF rss 0.6 Total Gate Charge Q nC g V = 4.5V, V = 10V, GS DS 0.1 Gate-Source Charge Q nC gs I = 250mA D 0.1 Gate-Drain Charge Q nC gd Turn-On Delay Time 4.9 ns t D(on) V = 10V, V = 4.5V, DD GS Turn-On Rise Time 3.1 ns t R R = 47, R = 10 L g Turn-Off Delay Time 386 ns t D(off) I = 200mA D Turn-Off Fall Time 174 ns t F Reverse Recovery Time 88 ns t RR I = 1A, di/dt = 100A/s F Reverse Recovery Charge 29 nC Q RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 10 May 2021 DMC2710UDW Diodes Incorporated www.diodes.com Document number: DS41410 Rev. 5 - 2 NEW PRODUCT