DMC2990UDJQ
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
I Max Low On-Resistance
D
Device BV R Max
DSS DS(ON)
T = +25C Very Low Gate Threshold Voltage, 1.0V Max
A
Low Input Capacitance
0.99 @ V = 4.5V 450mA
GS
Fast Switching Speed
1.2 @ V = 2.5V 400mA
GS
Q1 20V
Ultra-Small Surface Mount Package 1mm x 1mm
1.8 @ V = 1.8V 330mA
GS
Low Package Profile, 0.45mm Maximum Package Height
2.4 @ V = 1.5V 300mA
GS
ESD Protected Gate
1.9 @ V = -4.5V -310mA
GS
Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2)
2.4 @ V = -2.5V -280mA
GS
Halogen and Antimony Free. Green Device (Note 3)
Q2 -20V
-240mA
3.4 @ V = -1.8V
GS
Qualified to AEC-Q101 Standards for High Reliability
-180mA
5 @ V = -1.5V PPAP Capable (Note 4)
GS
Mechanical Data
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Case: SOT963
Automotive applications. It is qualified to AEC-Q101, supported by a
Case Material: Molded Plastic,Gree Molding Compound.
PPAP and is ideal for use in:
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
General Purpose Interfacing Switch
Terminal Connections Indicator: See Diagram
Power Management Functions
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Analog Switch
e3
Solderable per MIL-STD-202, Method 208
Weight: 0.027 grams (Approximate)
SOT963
D G S
1 2 2
ESD PROTECTED
S G D
1 1 2
Top View
Top View
Schematic and
Transistor Diagram
Ordering Information (Note 5)
Part Number Case Packaging
DMC2990UDJQ-7 SOT963 10K/Tape & Reel
DMC2990UDJQ-7B SOT963 10K/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMC2990UDJQ
Maximum Ratings Q1 N-CHANNEL (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 20 V
DSS
Gate-Source Voltage V 8 V
GSS
Steady T = +25C 450
A
I mA
D
State 350
T = +70C
A
Continuous Drain Current (Note 6) V = 4.5V
GS
T = +25C 520
A
t<5s mA
I
D
410
T = +70C
A
Steady T = +25C 330
A
I mA
D
State 260
TA = +70C
Continuous Drain Current (Note 6) V = 1.8V
GS
T = +25C 390
A
t<5s mA
I
D
310
T = +70C
A
Maximum Continuous Body Diode Forward Current (Note 6) I 440 mA
S
Pulsed Drain Current (Note 7) I 800 mA
DM
Maximum Ratings Q2 P-CHANNEL (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage -20 V
V
DSS
Gate-Source Voltage 8 V
V
GSS
Steady T = +25C -310
A
I mA
D
State -240
T = +70C
A
Continuous Drain Current (Note 6) V = -4.5V
GS
T = +25C
A -360
t<5s mA
I
D
-280
T = +70C
A
Steady T = +25C -240
A
I mA
D
State -190
T = +70C
A
Continuous Drain Current (Note 6) V = -1.8V
GS
T = +25C
A -280
t<5s mA
I
D
-220
T = +70C
A
Maximum Continuous Body Diode Forward Current (Note 6) -440 mA
I
S
Pulsed Drain Current (Note 7) -800 mA
I
DM
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 6) 350 mW
P
D
Steady State 360 C/W
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
t<5s 270 C/W
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout.
7. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%.
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DMC2990UDJQ September 2016
Diodes Incorporated
www.diodes.com
Document number: DS39168 Rev. 1 - 2
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
ADVANCE INFORMATION