DMC2990UDJQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Max Low On-Resistance D Device BV R Max DSS DS(ON) T = +25C Very Low Gate Threshold Voltage, 1.0V Max A Low Input Capacitance 0.99 V = 4.5V 450mA GS Fast Switching Speed 1.2 V = 2.5V 400mA GS Q1 20V Ultra-Small Surface Mount Package 1mm x 1mm 1.8 V = 1.8V 330mA GS Low Package Profile, 0.45mm Maximum Package Height 2.4 V = 1.5V 300mA GS ESD Protected Gate 1.9 V = -4.5V -310mA GS Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) 2.4 V = -2.5V -280mA GS Halogen and Antimony Free. Green Device (Note 3) Q2 -20V -240mA 3.4 V = -1.8V GS Qualified to AEC-Q101 Standards for High Reliability -180mA 5 V = -1.5V PPAP Capable (Note 4) GS Mechanical Data Description and Applications This MOSFET is designed to meet the stringent requirements of Case: SOT963 Automotive applications. It is qualified to AEC-Q101, supported by a Case Material: Molded Plastic,Gree Molding Compound. PPAP and is ideal for use in: UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 General Purpose Interfacing Switch Terminal Connections Indicator: See Diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. Analog Switch e3 Solderable per MIL-STD-202, Method 208 Weight: 0.027 grams (Approximate) SOT963 D G S 1 2 2 ESD PROTECTED S G D 1 1 2 Top View Top View Schematic and Transistor Diagram Ordering Information (Note 5) Part Number Case Packaging DMC2990UDJQ-7 SOT963 10K/Tape & Reel DMC2990UDJQ-7B SOT963 10K/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMC2990UDJQ Maximum Ratings Q1 N-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 8 V GSS Steady T = +25C 450 A I mA D State 350 T = +70C A Continuous Drain Current (Note 6) V = 4.5V GS T = +25C 520 A t<5s mA I D 410 T = +70C A Steady T = +25C 330 A I mA D State 260 TA = +70C Continuous Drain Current (Note 6) V = 1.8V GS T = +25C 390 A t<5s mA I D 310 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) I 440 mA S Pulsed Drain Current (Note 7) I 800 mA DM Maximum Ratings Q2 P-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage -20 V V DSS Gate-Source Voltage 8 V V GSS Steady T = +25C -310 A I mA D State -240 T = +70C A Continuous Drain Current (Note 6) V = -4.5V GS T = +25C A -360 t<5s mA I D -280 T = +70C A Steady T = +25C -240 A I mA D State -190 T = +70C A Continuous Drain Current (Note 6) V = -1.8V GS T = +25C A -280 t<5s mA I D -220 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) -440 mA I S Pulsed Drain Current (Note 7) -800 mA I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 350 mW P D Steady State 360 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<5s 270 C/W Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout. 7. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. 2 of 9 DMC2990UDJQ September 2016 Diodes Incorporated www.diodes.com Document number: DS39168 Rev. 1 - 2 NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT ADVANCE INFORMATION