DMC3016LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Low Input Capacitance D Device V R Max (BR)DSS DS(ON) T = +25C Low On-Resistance A 8.2A Fast Switching Speed 16m V = 10V GS Q1 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 7.3A 20m V = 4.5V GS Halogen and Antimony Free. Green Device (Note 3) 28m V = -10V -6.2A GS Q2 -30V Qualified to AEC-Q101 Standards for High Reliability 38m V = -4.5V -5.2A GS Description Mechanical Data This new generation MOSFET is designed to minimize the on-state Case: SO-8 resistance (R ), yet maintain superior switching performance, Case Material: Molded Plastic, Green Molding Compound. DS(ON) making it ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Applications Terminals: Finish Matte Tin Annealed over Copper Leadframe DC-DC Converters Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.074 grams (Approximate) Backlighting D 1 D 2 SO-8 S1 D1 Pin1 G1 D1 G1 D2 G2 S2 G2 D2 S1 S2 Top View Top View Pin Configuration N-Channel MOSFET P-Channel MOSFET Ordering Information (Note 4) Part Number Case Packaging DMC3016LSD-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMC3016LSD Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Q1 Value Q2 Units Drain-Source Voltage 30 -30 V V DSS Gate-Source Voltage 20 20 V V GSS Steady T = +25C 8.2 -6.2 A A I D State 6.5 -5.0 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 10.5 -8.0 A t<10s I A D 8.4 -6.4 T = +70C A Maximum Body Diode Forward Current (Note 6) 2.5 -2.5 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 80 -40 A I DM Avalanche Current (Note 7) L = 0.1mH I 22 -22 A AS Avalanche Energy (Note 7) L = 0.1mH E 25 25 mJ AS Thermal Characteristics Characteristic Symbol Value Units 1.2 T = +25C A Total Power Dissipation (Note 5) W P D 0.8 T = +70C A Steady State 102 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 62 1.6 T = +25C A Total Power Dissipation (Note 6) W P D 1.0 T = +70C A Steady State 78 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 47 C/W Thermal Resistance, Junction to Case (Note 6) 12 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics (N-Channel Q1) ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 30V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 1.0 3.0 V V V = V , I = 250A GS(th) DS GS D 12 16 V = 10V, I = 12A GS D Static Drain-Source On-Resistance m R DS(ON) 15 20 V = 4.5V, I = 10A GS D Diode Forward Voltage 0.7 1.0 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 1,415 ISS V = 15V, V = 0V, DS GS Output Capacitance C 119 pF OSS f = 1.0MHz Reverse Transfer Capacitance C 82 RSS Gate Resistance R 2.6 3.2 V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge (V = 4.5V) Q 11.3 GS G 25.1 Total Gate Charge (VGS = 10V) QG nC VDS = 15V, ID = 12A Gate-Source Charge 3.5 Q GS Gate-Drain Charge 3.6 Q GD Turn-On Delay Time 4.8 t D(ON) Turn-On Rise Time 16.5 t V = 15V, V = 10V, R DD GS ns Turn-Off Delay Time t 26.1 R = 1.25, R = 3, D(OFF) L G Turn-Off Fall Time t 5.6 F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 7. UIS in production with L = 0.1mH, starting T = +25C. A 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 10 DMC3016LSD December 2015 Diodes Incorporated www.diodes.com Document Number: DS36935 Rev. 4 - 2