DMC3021LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I Max D Device V R max (BR)DSS DS(on) T = +25C Low Input Capacitance A Fast Switching Speed 21m V = 10V 8.5A GS Q2 30V Low Input/Output Leakage 32m V = 4.5V 7.2A GS Complementary Pair MOSFET -7A 39m V = -10V GS Q1 -30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -5.6A 53m V = -4.5V GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Mechanical Data This MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(on) Case: SO-8 ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Power Management Functions Terminals: Finish - Matte Tin annealed over Copper lead frame Analog Switch e3 Solderable per MIL-STD-202, Method 208 Load Switch Weight: 0.072 grams (approximate) SO-8 D2 D1 S2 D2 G2 D2 G2 G1 S1 D1 G1 D1 Top View Top View S2 S1 P-Channel MOSFET N-Channel MOSFET Ordering Information (Note 4) Part Number Case Packaging DMC3021LSD-13 SO-8 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMC3021LSD Maximum Ratings N-CHANNEL Q2 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 8.5 A Continuous Drain Current (Note 5) A I D State 7.1 T = +85C A Pulsed Drain Current (Note 6) 26 A I DM Maximum Ratings P-CHANNEL Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C -7.0 A Continuous Drain Current (Note 5) I A D State -4.5 T = +85C A Pulsed Drain Current (Note 6) -25 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 2.5 W D Thermal Resistance, Junction to Ambient (Note 5) R 50 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics N-CHANNEL Q2 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 30 V BV V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1.0 A V = 30V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 1.45 2.1 V V = V , I = 250 A GS(th) DS GS C 14 21 V = 10V, I = 7A GS C Static Drain-Source On-Resistance R m DS (ON) 18 32 V = 4.5V, I = 5.6A GS C Forward Transfer Admittance Y 8.1 S V = 5V, I = 7A fs DS C Diode Forward Voltage (Note 7) 0.7 1.0 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 767 pF C iss V = 10V, V = 0V, DS GS Output Capacitance 110 pF C oss f = 1.0MHz Reverse Transfer Capacitance 105 pF C rss Gate Resistance 1.4 R V = 0V, V = 0V, f = 1MHz g DS GS 7.8 Total Gate Charge (V = 4.5V) Q nC GS g 16.1 Total Gate Charge (V = 10V) Q nC GS g V = 15V, I = 9A DS D 1.8 Gate-Source Charge Q nC gs 2.5 Gate-Drain Charge Q nC gd 5.0 Turn-On Delay Time t ns D(on) 4.5 V = 10V, V = 15V, Turn-On Rise Time t ns GS DS r Turn-Off Delay Time 26.3 ns t R = 6 , I = 1A D(off) G D Turn-Off Fall Time 8.55 ns t f Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 8 February 2014 DMC3021LSD Diodes Incorporated www.diodes.com Document number: DS32152 Rev. 2 - 2 NEW PRODUCT