DMC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I D MAX Device V R Package (BR)DSS DS(ON) max Low Input Capacitance T = +25C A Fast Switching Speed 8.5A 20m V = 10V GS N-Channel 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 7.0A 32m V = 4.5V GS SO-8 Halogen and Antimony Free. Green Device (Note 3) 45m V = -10V -5.5A GS P-Channel -30V Qualified to AEC-Q101 Standards for High Reliability -4.1A 85m VGS = -4.5V Mechanical Data Description Case: SO-8 This MOSFET is designed to minimize the on-state resistance Case Material: Molded Plastic,Gree Molding Compound. (R ) and yet maintain superior switching performance, making it DS(ON) UL Flammability Classification Rating 94V-0 ideal for high-efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Applications Terminals: Finish Matte Tin Annealed Over Copper Leadframe. DC Motor Control Solderable per MIL-STD-202, Method 208 DC-AC Inverters Weight: 0.008 grams (Approximate) D2 D1 SO-8 S2 D2 G2 D2 G2 G1 S1 D1 G1 D1 S2 S1 Q2 N-CHANNEL MOSFET Q1 P-CHANNEL MOSFET Top View Pin Configuration Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMC3025LSD-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMC3025LSD Maximum Ratings N-CHANNEL Q2 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 6.5 A I A D State 5.1 TA = +70C Continuous Drain Current (Note 5) V = 10V GS 8.5 T = +25C A t<10s A I D 6.8 T = +70C A Steady T = +25C 5.3 A I A D State T = +70C 4.1 A Continuous Drain Current (Note 5) V = 4.5V GS 7.0 TA = +25C t<10s A I D 5.5 T = +70C A Maximum Continuous Body Diode Forward Current (Note 5) I 2 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I 60 A DM Pulsed Body Diode Current (10s pulse, duty cycle = 1%) I 60 A SM Avalanche Current (Note 7) L = 0.1mH I 14 A AS Avalanche Energy (Note 7) L = 0.1mH E 10 mJ AS Maximum Ratings P-CHANNEL Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Steady -4.2 TA = +25C A I D State -3.2 T = +70C A Continuous Drain Current (Note 5) V = -10V GS T = +25C -5.5 A t<10s I A D T = +70C -4.3 A Steady T = +25C -3.5 A A I D State -2.3 T = +70C A Continuous Drain Current (Note 5) V = -4.5V GS T = +25C -4.1 A t<10s I A D T = +70C -3.2 A Maximum Continuous Body Diode Forward Current (Note 5) I -2 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I -30 A DM Pulsed Body Diode Current (10s pulse, duty cycle = 1%) -30 A ISM Avalanche Current (Note 7) L = 0.1mH -14 A I AS Avalanche Energy (Note 7) L = 0.1mH 10 mJ E AS Thermal Characteristics Characteristic Symbol Value Units 1.2 T = +25C A Total Power Dissipation (Note 6) P W D 0.77 T = +70C A Steady State 104 Thermal Resistance, Junction to Ambient (Note 6) C/W R JA t<10s 62 1.5 T = +25C A Total Power Dissipation (Note 5) P W D T = +70C 0.95 A Steady State 83 Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 49 C/W Thermal Resistance, Junction to Case (Note 5) 15 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 2 of 10 February 2015 DMC3025LSD Diodes Incorporated www.diodes.com Document number: DS35717 Rev. 7 - 2 ADVANCED INFORMATION