DMC3025LSDQ 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I Max D Device BV R Max Package DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 8.5A 20m V = 10V GS N-Channel 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 7.0A 32m V = 4.5V GS SO-8 Halogen and Antimony Free. Green Device (Note 3) 45m V = -10V -5.5A GS P-Channel -30V Qualified to AEC-Q101 Standards for High Reliability -4.1A 85m VGS = -4.5V PPAP Capable (Note 4) Mechanical Data Description and Applications Case: SO-8 This MOSFET is designed to meet the stringent requirements of Case Material: Molded Plastic,Gree Molding Compound. Automotive applications. It is qualified to AEC-Q101, supported by a UL Flammability Classification Rating 94V-0 PPAP and is ideal for use in: Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram DC Motor Control Terminals: Finish Matte Tin Annealed Over Copper Leadframe. DC-AC Inverters Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) D2 D1 SO-8 S2 D2 G2 D2 G2 G1 D1 S1 G1 D1 S2 S1 Q2 N-CHANNEL MOSFET Q1 P-CHANNEL MOSFET Top View Pin Configuration Equivalent Circuit Ordering Information (Note 5) Part Number Case Packaging DMC3025LSDQ-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMC3025LSDQ Maximum Ratings N-CHANNEL Q2 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 6.5 A I A D State 5.1 TA = +70C Continuous Drain Current (Note 6) V = 10V GS 8.5 T = +25C A t<10s A I D 6.8 T = +70C A Steady T = +25C 5.3 A I A D State T = +70C 4.1 A Continuous Drain Current (Note 6) V = 4.5V GS 7.0 TA = +25C t<10s A I D 5.5 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) I 2 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I 60 A DM Pulsed Body Diode Current (10s pulse, duty cycle = 1%) I 60 A SM Avalanche Current (Note 8) L = 0.1mH I 14 A AS Avalanche Energy (Note 8) L = 0.1mH E 10 mJ AS Maximum Ratings P-CHANNEL Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Steady -4.2 T = +25C A A I D State -3.2 T = +70C A Continuous Drain Current (Note 6) V = -10V GS T = +25C -5.5 A t<10s I A D T = +70C -4.3 A Steady T = +25C -3.5 A A I D State -2.3 T = +70C A Continuous Drain Current (Note 6) V = -4.5V GS T = +25C -4.1 A t<10s I A D T = +70C -3.2 A Maximum Continuous Body Diode Forward Current (Note 6) I -2 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I -30 A DM Pulsed Body Diode Current (10s pulse, duty cycle = 1%) -30 A I SM Avalanche Current (Note 8) L = 0.1mH -14 A I AS Avalanche Energy (Note 8) L = 0.1mH 10 mJ E AS Thermal Characteristics Characteristic Symbol Value Units 1.2 T = +25C A Total Power Dissipation (Note 7) P W D 0.77 T = +70C A Steady State 104 Thermal Resistance, Junction to Ambient (Note 7) R C/W JA t<10s 62 T = +25C 1.5 A Total Power Dissipation (Note 6) W PD T = +70C 0.95 A Steady State 83 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 49 C/W Thermal Resistance, Junction to Case (Note 6) R 15 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 8. I and E rating are based on low frequency and duty cycles to keep T = 25C. AS AS J 2 of 11 DMC3025LSDQ October 2017 Diodes Incorporated www.diodes.com Document number: DS40186 Rev. 1 - 2