DMC3026LSD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
Low Input Capacitance
I max
D
Device
V R max
(BR)DSS DS(ON)
Low On-Resistance
T = +25C
A
25m @ V = 10V 6.5A Fast Switching Speed
GS
Q1 30V
29m @ V = 4.5V 6.1A
GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
28m @ V = -10V -6.2A
GS
Halogen and Antimony Free. Green Device (Note 3)
Q2 -30V
38m @ V = -4.5V -5.3A
GS
Qualified to AEC-Q101 Standards for High Reliability
Description
Mechanical Data
This new generation MOSFET has been designed to minimize the on-
Case: SO-8
state resistance (R ) and yet maintain superior switching
DS(ON) Case Material: Molded Plastic, Green Molding Compound.
performance, making it ideal for high efficiency power management
UL Flammability Classification Rating 94V-0
applications.
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Applications Terminals: Finish Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
DC-DC Converters
Weight: 0.074 grams (approximate)
Power Management Functions
Backlighting
D 1
D2
S1 D1
D1
G1
Pin1
G1
G2
S2
D2
S1
S2
G2 D2
Top View Top View Equivalent Circuit
Pin Configuration
Ordering Information (Note 4)
Part Number Case Packaging
DMC3026LSD-13 SO-8 2,500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMC3026LSD
Maximum Ratings Q1 and Q2 (@T = +25C, unless otherwise specified.)
A
Characteristic SymbolQ1 Q2Units
Drain-Source Voltage V 30 -30 V
DSS
Gate-Source Voltage V 20 20 V
GSS
Steady 6.5 -6.2
T = +25C
A
I A
D
State T = +70C 5.2 -5.0
A
Continuous Drain Current (Note 6) V = 10V
GS
8.2 -8.0
T = +25C
A
t<10s I A
D
T = +70C 6.7 -6.5
A
Maximum Body Diode Forward Current (Note 6) I 2.2 -2.5 A
S
Pulsed Drain Current (10s pulse, duty cycle = 1%) I 40 -40 A
DM
Avalanche Current (Notes 7) L = 0.1mH I 14.5 22 A
AS
Avalanche Energy (Notes 7) L = 0.1mH E 10.5 25 mJ
AS
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
= +25C 1.2
T
A
Total Power Dissipation (Note 5) W
P
D
0.8
T = +70C
A
Steady state 102
Thermal Resistance, Junction to Ambient (Note 5) C/W
R
JA
t<10s 62
1.6
T = +25C
A
Total Power Dissipation (Note 6) P W
D
1.0
T = +70C
A
Steady state 78
Thermal Resistance, Junction to Ambient (Note 6) R
JA
t<10s 47
C/W
Thermal Resistance, Junction to Case (Note 6) R 14.5
JC
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics Q1 (@T = +25C, unless otherwise specified.)
A
Characteristic SymbolMinTypMaxUnit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage 30 V
BV V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current I 1 A V = 24V, V = 0V
DSS DS GS
Gate-Source Leakage I 100 nA V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage V 1 3 V V = V , I = 250A
GS(th) DS GS D
19 25 V = 10V, I = 6A
GS D
Static Drain-Source On-Resistance R m
DS (ON)
22 29 V = 4.5V, I = 5A
GS D
Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1.3A
SD GS S
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance C 641
iss
V = 15V, V = 0V
DS GS
Output Capacitance 66 pF
C
oss
f = 1.0MHz
Reverse Transfer Capacitance 51
C
rss
Gate Resistance 2.2
R V = 0V, V = 0V, f = 1.0MHz
G DS GS
6
Total Gate Charge (V = 4.5V) Q
GS g
Total Gate Charge (V = 10V) Q 13.2
GS g
nC V = 15V, I = 10A
DS D
Gate-Source Charge Q 1.7
gs
Gate-Drain Charge Q 2.2
gd
Turn-On Delay Time t 3.3
D(on)
Turn-On Rise Time t 4.4
r V = 10V, V = 15V, R = 6,
GS DD G
nS
Turn-Off Delay Time 22.3 I = 1A
t D
D(off)
Turn-Off Fall Time 5.3
t
f
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. UIS in production with L = 0.1mH, starting T = +25C.
A
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2 of 9 July 2014
DMC3026LSD
Diodes Incorporated
www.diodes.com
Document number: DS36936 Rev.1 - 2
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ADVANCED INFORMATION
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