A Product Line of Diodes Incorporated DMC3028LSD 30V COMPLEMENTARY DUAL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance I D Device V R Fast switching speed (BR)DSS DS(on) T = 25C A Green Component and RoHS Compliant (Note 1) 28m V = 10V 7.1A GS Q1 30V 45m V = 4.5V 5.6A GS Mechanical Data 25m V = -10V -7.4A GS Q2 -30V Case: SO-8 41m V = -4.5V -5.7A GS Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) Moisture Sensitivity: Level 1 per J-STD-020D Description and Applications Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. This new generation complementary dual MOSFET features low on- Solderable per MIL-STD-202, Method 208 resistance and fast switching, making it ideal for high efficiency power management applications. Weight: 0.074 grams (approximate) Motor control Backlighting DC-DC Converters Power management functions D1 D2 S1 D1 D1 G1 G1 G2 S2 D2 D2 G2 S1 S2 TOP VIEW Top view Q1 N-Channel Q2 P-Channel Ordering Information (Note 1) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMC3028LSD-13 C3028LD 13 12 2,500 Note: 1. Diodes, Inc. defines Green products as those which are Eu RoHS compliant and contain no halogens or antimony compounds further information about Diodes Inc.s Green Policy can be found on our website. For packaging details, go to our website Marking Information = Manufacturers Marking C3028LD = Product Type Marking Code YYWW = Date Code Marking C3028LD YY = Year (ex: 09 = 2009) YY WW WW = Week (01-52) 1 of 11 July 2009 DMC3028LSD Diodes Incorporated www.diodes.com Document Revision: 4 A Product Line of Diodes Incorporated DMC3028LSD Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Units Drain-Source Voltage 30 -30 V V DSS Gate-Source Voltage V V 20 20 GSS (Notes 3 & 5) 7.1 -7.4 5.7 -5.9 T = 70C (Notes 3 & 5) A Continuous Drain Current A V = 10V I GS D (Notes 2 & 5) 5.5 -5.8 (Notes 2 & 6) 6.6 -6.8 Pulsed Drain Current V = 10V (Notes 4 & 5) I 34 -36 A GS DM Continuous Source Current (Body diode) (Notes 3 & 5) A I 3.5 -3.5 S Pulsed Source Current (Body diode) (Notes 4 & 5) A I 34 -36 SM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Unit Power Dissipation 1.3 W (Notes 2 & 5) P D Linear Derating Factor 10 mW/C Power Dissipation 1.8 W (Notes 2 & 6) P D Linear Derating Factor 14 mW/C W Power Dissipation 2.1 (Notes 3 & 5) P D Linear Derating Factor 17 mW/C (Notes 2 & 5) 100 Thermal Resistance, Junction to Ambient (Notes 2 & 6) 70 C/W R JA (Notes 3 & 5) 60 Thermal Resistance, Junction to Lead (Notes 5 & 7) R 51 46 C/W JL Operating and Storage Temperature Range T -55 to +150 C T J, STG Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 3. Same as note (2), except the device is measured at t 10 sec. 4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 s. The pulse current is limited by the maximum junction temperature. 5. For a dual device with one active die. 6. For a device with two active die running at equal power. 7. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 11 July 2009 DMC3028LSD Diodes Incorporated www.diodes.com Document Revision: 4