DMC3028LSDXQ
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
I max Low Input Capacitance
D
Device
V R max
(BR)DSS DS(ON)
T = +25C
A Low On-Resistance
Fast Switching Speed
27m @ V = 10V 7.2A
GS
Q1 30V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
35m @ V = 4.5V 6.0A
GS
Halogen and Antimony Free. Green Device (Note 3)
25m @ V = -10V -7.6A
GS
Q2 -30V Qualified to AEC-Q101 Standards for High Reliability
41m @ V = -4.5V
GS -6.2A
PPAP Capable (Note 4)
Description
Mechanical Data
This new generation MOSFET is designed to minimize the on-state
Case: SO-8
resistance (R ) and yet maintain superior switching performance,
DS(ON)
Case Material: Molded Plastic, Green Molding Compound;
making it ideal for high efficiency power management applications.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Applications
Terminals: Finish Tin Finish Annealed over Copper Leadframe;
DC-DC Converters
Solderable per MIL-STD-202, Method 208 e3
Power Management Functions
Weight: 0.074 grams (Approximate)
Backlighting
SO-8 S1 D1
G1 D1
S2
D2
D2
G2
Top View Top View Equivalent Circuit
Pin Configuration
Ordering Information (Note 5)
Part Number Case Packaging
DMC3028LSDXQ-13 SO-8 2,500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMC3028LSDXQ
Maximum Ratings Q1 and Q2 (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Q1 Q2 Units
Drain-Source Voltage V 30 -30 V
DSS
Gate-Source Voltage V 20 20 V
GSS
T = +25C
Steady 5.5 -5.8
A
A
I
D
State 4.1 -4.3
T = +70C
A
Continuous Drain Current (Note 6) V =10V
GS
T = +25C 7.2 -7.6
A
t<10s A
I
D
5.7 -6.1
T = +70C
A
Maximum Body Diode Forward Current (Note 6) I 2.2 -2.2 A
S
Pulsed Drain Current (10s pulse, duty cycle = 1%) I 40 -30 A
DM
Thermal Characteristics (@TA = +25C, unless otherwise specified.)
Characteristic Symbol Value Units
1.2
T = +25C
A
Total Power Dissipation (Note 6) P W
D
0.75
T = +70C
A
Steady State 108
Thermal Resistance, Junction to Ambient (Note 6) R C/W
JA
t<10s 65
1.5
T = +25C
A
Total Power Dissipation (Note 7) W
P
D
0.95
T = +70C
A
Steady State 85
Thermal Resistance, Junction to Ambient (Note 7)
R
JA
t<10s 50
C/W
Thermal Resistance, Junction to Case (Note 7) R 14.5
JC
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics Q1 (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage 30 V
BV V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current 1 A
I V = 24V, V = 0V
DSS DS GS
Gate-Source Leakage nA
I 100 V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage 1 3 V
V V = V , I = 250A
GS(th) DS GS D
19 27
V = 10V, I = 6A
GS D
Static Drain-Source On-Resistance R m
DS (ON)
22 35 V = 4.5V, I = 5A
GS D
Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1.3A
SD GS S
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance C 641
iss
V = 15V, V = 0V
DS GS
Output Capacitance C 66 pF
oss
f = 1.0MHz
Reverse Transfer Capacitance C 51
rss
Gate Resistance 2.2
RG VDS = 0V, VGS = 0V, f = 1.0MHz
6
Total Gate Charge (V = 4.5V) Q
GS g
13.2
Total Gate Charge (V = 10V) Q
GS g
nC V = 15V, I = 10A
DS D
Gate-Source Charge 1.7
Q
gs
Gate-Drain Charge 2.2
Q
gd
Turn-On Delay Time t 3.3
D(on)
Turn-On Rise Time t 4.4
r VGS = 10V, VDD = 15V, RG = 6,
nS
Turn-Off Delay Time t 22.3 I = 1A
D(off) D
Turn-Off Fall Time t 5.3
f
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DMC3028LSDXQ May 2015
Diodes Incorporated
www.diodes.com
Document number: DS37963 Rev. 1 - 2
ADVANCE INFORMATION
ADVANCED INFORMATION