DMC31D5UDJ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D Device V R max (BR)DSS DS(ON) Very low Gate Threshold Voltage, 1.0V max T = +25C A Low Input Capacitance 1.5 V = 4.5V GS Fast Switching Speed 2.0 V = 2.5V GS Q1 30V 0.22A Ultra-Small Surface Mount Package 1mm x 1mm 3.0 V = 1.8V GS ESD Protected Gate 4.5 V = 1.5V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 5 V = -4.5V GS Halogen and Antimony Free. Green Device (Note 3) 6 V = -2.5V GS Qualified to AEC-Q101 standards for High Reliability Q2 -30V -0.2A 7 V = -1.8V GS 10 V = -1.5V GS Mechanical Data Case: SOT963 Description Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 This MOSFET has been designed to minimize the on-state resistance Moisture Sensitivity: Level 1 per J-STD-020 (R ) and yet maintain superior switching performance, making it DS(ON) Terminal Connections Indicator: See Diagram ideal for high efficiency power management applications. Terminals: Finish Matte Tin Annealed over Copper Leadframe e3 Solderable per MIL-STD-202, Method 208 Applications Weight: 0.027 grams (approximate) General Purpose Interfacing Switch Power Management Functions Analog Switch SOT963 D G S 1 2 2 ESD PROTECTED S G D 1 1 2 Top View Top View Schematic and Transistor Diagram Ordering Information (Note 4) Part Number Case Packaging DMC31D5UDJ-7 SOT963 10K/Tape & Reel DMC31D5UDJ-7B SOT963 10K/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMC31D5UDJ Maximum Ratings Q1 N-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 220 A mA Continuous Drain Current (Note 5) V = 4.5V I GS D State 160 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) 200 mA I S Pulsed Drain Current (Note 6) 600 mA I DM Maximum Ratings Q2 P-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -30 V DSS Gate-Source Voltage 12 V V GSS Steady -200 T = +25C A mA Continuous Drain Current (Note 5) V = -4.5V I GS D State -140 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) I -200 mA S Pulsed Drain Current (Note 6) I -600 mA DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 350 mW D Steady State Thermal Resistance, Junction to Ambient (Note 5) R 361 C/W JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics Q1 N-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current T = +25C I 100 nA V = 24V, V = 0V C DSS DS GS Gate-Source Leakage 10 A I V = 10V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.4 1.0 V V V = V , I = 250 A GS(th) DS GS D 0.9 1.5 V = 4.5V, I = 100mA GS D 1.0 2.0 V = 2.5V, I = 50mA GS D Static Drain-Source On-Resistance R 1.2 3.0 V = 1.8V, I = 20mA DS(ON) GS D 1.4 4.5 V = 1.5V, I = 10mA GS D 2.3 V = 1.2V, I = 1mA GS D Diode Forward Voltage V 0.6 1.0 V V = 0V, I = 10mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 22.6 pF iss V = 15V, V = 0V, DS GS Output Capacitance C 2.68 pF oss f = 1.0MHz Reverse Transfer Capacitance 1.8 pF C rss Total Gate Charge 0.38 nC Q g V = 4.5V, V = 15V, GS DS Gate-Source Charge 0.05 nC Q gs I = 200mA D Gate-Drain Charge 0.07 nC Q gd Turn-On Delay Time 3.2 ns t D(on) Turn-On Rise Time t 2.2 ns V = 15V, V = 4.5V, r DD GS Turn-Off Delay Time t 21 ns R = 2 , I = 200mA D(off) G D Turn-Off Fall Time t 7.5 ns f 2 of 9 June 2014 DMC31D5UDJ Diodes Incorporated www.diodes.com Document number: DS36799 Rev. 2 - 2 NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT NEW PRODUCT ADVANCE INFORMATION