DMC3400SDW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D Device V R max (BR)DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 0.4 V = 10V 0.65A GS ESD Protected Gate Q1 30 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 0.7 V = 4.5V GS 0.52A Halogen and Antimony Free. Green Device (Note 3) 0.9 V = -10V -0.45A GS Q2 -30 1.7 V = -4.5V -0.33A GS Mechanical Data Case: SOT363 Description and Applications Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 This MOSFET is designed to minimize the on-state resistance Moisture Sensitivity: Level 1 per J-STD-020 (R ) and yet maintain superior switching performance, making DS(ON) it ideal for high efficiency power management applications. Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Motor Control Leadframe. Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.027 grams (Approximate) DC-DC Converters D2 D1 D G S 1 2 2 SOT363 G2 G1 Gate Protection Gate Protection S2 Diode S1 Diode ESD PROTECTED S G D 1 1 2 Q1 N-CHANNEAL Q2 P-CHANNEAL Top View Top View Pin out Ordering Information (Note 4) Part Number Case Packaging DMC3400SDW-7 SOT363 3000/Tape & Reel DMC3400SDW-13 SOT363 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMC3400SDW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Q1 Value Q2 Units -30 Drain-Source Voltage V 30 V DSS 20 Gate-Source Voltage V 20 V GSS Steady T = +25C 0.65 -0.45 A Continuous Drain Current (Note 6) V = 10V I A GS D State 0.50 -0.36 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) 0.4 -0.35 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 4 -3 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 0.31 W D Steady State Thermal Resistance, Junction to Ambient (Note 5) 406 C/W R JA Total Power Dissipation (Note 6) 0.39 W P D Thermal Resistance, Junction to Ambient (Note 6) Steady State 319 C/W R JA Thermal Resistance, Junction to Case 126 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics N Channel Q1 ( TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 30 - - V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current - - 1 A I V = 24V, V = 0V DSS DS GS Gate-Source Leakage - - 10 A I V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.8 - 1.6 V V V = V , I = 250A GS(TH) DS GS D - 0.2 0.4 V = 10V, I = 0.59A GS D Static Drain-Source On-Resistance R DS(ON) - 0.3 0.7 V = 4.5V, I = 0.2A GS D Diode Forward Voltage V - 0.8 1.2 V V = 0V, I = 0.23A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C - 55 - pF iss V = 15V, V = 0V, DS GS Output Capacitance C - 8.5 - pF oss f = 1.0MHz Reverse Transfer Capacitance C - 6.5 - pF rss Gate Resistance R - 92 - V = V = 0V, f = 1.0MHz g DS GS - 0.6 - nC Total Gate Charge (VGS = 4.5V) Qg - 1.4 - nC Total Gate Charge (V = 10V) Q V = 10V, GS g DS Gate-Source Charge - 0.2 - nC I = 250mA Q D gs Gate-Drain Charge - 0.1 - nC Q gd Turn-On Delay Time - 3.8 - ns t D(ON) Turn-On Rise Time t - 3.5 - ns V = 10V, V = 30V, R GS DS Turn-Off Delay Time t - 25.2 - ns I = 100mA, R = 1 D(OFF) D G Turn-Off Fall Time t - 18.8 - ns F 2 of 9 DMC3400SDW February 2015 Diodes Incorporated www.diodes.com Document number: DS37690 Rev. 1 - 2 NEW PRODUCT NEW PRODUCT