X-On Electronics has gained recognition as a prominent supplier of DMC4028SSD-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMC4028SSD-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.
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A Product Line of Diodes Incorporated DMC4028SSD 40V COMPLEMENTARY DUAL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D Device V R Max (BR)DSS DS(on) T = +25 C Fast Switching Speed A Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 28m V = 10V 7.2A GS Q1 40V Halogen and Antimony Free. Green Device (Note 3) 49m V = 4.5V 5.4A GS Qualified to AEC-Q101 Standards for High Reliability -5.2A 50m V = -10V GS Q2 -40V -4.7A 79m V = -4.5V GS Mechanical Data Description Case: SO-8 This MOSFET has been designed to minimize the on-state resistance Case Material: Molded Plastic, Green Molding Compound. UL and yet maintain superior switching performance, making it ideal for Flammability Classification Rating 94V-0 high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See diagram below Applications Terminals: Finish - Matte Tin annealed over Copper lead frame. e3 Solderable per MIL-STD-202, Method 208 Motor Control Weight: 0.074 grams (approximate) Backlighting DC-DC Converters Power Management Functions D1 D2 SO-8 S1 D1 G1 D1 G1 G2 S2 D2 S1 S2 G2 D2 Q1 N-Channel Q2 P-Channel Top view Top View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Compliance Case Packaging DMC4028SSD-13 Standard SO-8 2500 / Tape & Reel DMC4028SSDQ-13 Automotive SO-8 2500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See A Product Line of Diodes Incorporated DMC4028SSD Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Units Drain-Source Voltage 40 -40 V V DSS Gate-Source Voltage (Note 5) V V 20 20 GSS (Notes 7 & 9) 7.2 5.2 5.5 4.2 T = 70C (Notes 7 & 9) A Continuous Drain Current A V = 10V I GS D (Notes 6 & 9) 5.4 4 (Notes 6 & 10) 6.5 4.8 Pulsed Drain Current (Notes 7 & 9) 27.3 20.4 A V = 10V I GS DM Continuous Source Current (Body diode) (Notes 7 & 9) 3.35 3.15 A I S Pulsed Source Current (Body diode) (Notes 8 & 9) 27.3 20.4 A I SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Unit 1.25 (Notes 6 & 9) 10 Power Dissipation 1.8 W Linear Derating Factor (Notes 6 & 10) P D 14.3 mW/C 2.16 (Notes 7 & 9) 17.2 (Notes 6 & 9) 100 Thermal Resistance, Junction to Ambient (Notes 6 & 10) 70 R JA C/W (Notes 7 & 9) 58 Thermal Resistance, Junction to Lead (Notes 9 & 11) R 53 53 JL Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 5. AEC-Q101 V maximum is 16V. GS 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 7. Same as note (5), except the device is measured at t 10 sec. 8. Same as note (5), except the device is pulsed with D= 0.02 and pulse width 300 s. The pulse current is limited by the maximum junction temperature. 9. For a dual device with one active die. 10. For a device with two active die running at equal power. 11. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 11 April 2013 DMC4028SSD Diodes Incorporated www.diodes.com Document Number: D35041 Rev: 2 - 2 ADVANCE INFORMATION