DMC4040SSD
40V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
Matched N & P R Minimizes Power Losses
DS(ON)
I Max (A)
D
Fast Switching Minimizes Switching Losses
Device V R Max
(BR)DSS DS(ON) T = +25C
A
Dual Device Reduces PCB Area
(Notes 6 & 8)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
7.5
25m @ VGS= 10V
Halogen and Antimony Free. Green Device (Note 3)
Q1 40V
6.2
40m @ V = 4.5V
GS
-7.3
25m @ V = -10V
GS
Q2 -40V
-5.7
45m @ V = -4.5V
GS
Mechanical Data
Description
Case: SO-8
This MOSFET is designed to ensure that R of N and P channel
DS(ON)
Case Material: Molded Plastic, Green Molding Compound.
FET are matched to minimize losses in both arms of the bridge. The
UL Flammability Classification Rating 94V-0
DMC4040SSD is optimized for use in a 3-phase brushless DC motor
Moisture Sensitivity: Level 1 per J-STD-020
circuit (BLDC), and CCFL backlighting.
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Applications
Weight: 0.074 grams (Approximate)
3-Phase BLDC Motor
CCFL Backlighting
SO-8
D1 D2
S1 D1
G1 D1
G1 G2
S2 D2
D2
G2
S1 S2
Q2 P-Channel
Q1 N-Channel
Top View
Top View
Equivalent Circuit
Ordering Information (Note 4)
Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
DMC4040SSD-13 C4040SD 13 12 2,500
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMC4040SSD
Marking Information
= Manufacturers Marking
C4040SD = Product Type Marking Code
YYWW = Date Code Marking
C4040SD
YY or YY= Year (ex: 10 = 2010)
YY
WW
WW = Week (01 - 53)
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Unit
Drain-Source Voltage 40 -40
V
DSS
V
Gate-Source Voltage
V 20 20
GSS
(Notes 6 & 8) 7.5 -7.5
5.8 -5.8
T = +70C (Notes 6 & 8)
A
Continuous Drain Current
V = 10V I
GS D
(Notes 5 & 8) 5.7 -5.7
(Notes 5 & 9) 6.8 -6.8
A
Pulsed Drain Current (Notes 7 & 8) 29.0 -29.0
V = 10V I
GS DM
Continuous Source Current (Body Diode) (Notes 6 & 8) 3.0 -3.0
I
S
Pulsed Source Current (Body Diode) (Notes 7 & 8)
I 29.0 -29.0
SM
Thermal Characteristics
Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Unit
1.25
(Notes 5 & 8)
10
Power Dissipation 1.8 W
(Notes 5 & 9) P
D
Linear Derating Factor 14.3 mW/C
2.14
(Notes 6 & 8)
17.2
(Notes 5 & 8) 100
Thermal Resistance, Junction to Ambient (Notes 5 & 9) 70
R
JA
C/W
(Notes 6 & 8) 58
Thermal Resistance, Junction to Lead (Notes 5 & 10) R 51
JL
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as note (5), except the device is measured at t 10 sec.
7. Same as note (5), except the device is pulsed with D = 0.02 and pulse width 300s.
8. For a dual device with one active die.
9. For a device with two active die running at equal power.
10. Thermal resistance from junction to solder-point (at the end of the drain lead).
2 of 10
DMC4040SSD September 2015
Diodes Incorporated
www.diodes.com
Document number: DS32120 Rev. 3 - 2
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