DMC4047LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance I D Device V R (BR)DSS DS(on) max T = +25C Low On-Resistance A Fast Switching Speed 24m V = 10V 6.9A GS Q2 40V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 32m V = 4.5V 6.0A GS Halogen and Antimony Free. Green Device (Note 3) -5.1A 45m V = -10V GS Q1 -40V Qualified to AEC-Q101 Standards for High Reliability -4.5A 55m V = -4.5V GS Mechanical Data Description Case: SO-8 This new generation MOSFET has been designed to minimize the on- Case Material: Molded Plastic, Green Molding Compound. state resistance (R ) and yet maintain superior switching UL Flammability Classification Rating 94V-0 DS(ON) performance, making it ideal for high efficiency power management Moisture Sensitivity: Level 1 per J-STD-020 applications. Terminal Connections: See Diagram Terminals: Finish Matte Tin annealed over Copper leadframe Solderable per MIL-STD-202, Method 208 e3 Applications Weight: 0.074 grams (approximate) DC-DC Converters Power Management Functions Backlighting D2 D1 S2 D2 G2 D2 G2 S1 D1 G1 G1 D1 S2 S1 TOP VIEW Top View N-Channel MOSFET P-Channel MOSFET Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMC4047LSD-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMC4047LSD Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Q2 Value Q1 Units Drain-Source Voltage 40 -40 V V DSS Gate-Source Voltage 20 20 V V GSS Steady T = +25C 7.0 -5.1 A I A D State 5.6 -4.1 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C A 9.0 -6.5 t<10s A I D 7.2 -5.2 T = +70C A Maximum Body Diode Forward Current (Note 6) 2.5 -2.5 A I S Pulsed Drain Current (10s pulse, duty cycle = 1%) 70 -40 A I DM Avalanche Current (Notes 7) L = 0.1mH 20 20 A I AR Repetitive Avalanche Energy (Notes 7) L = 0.1mH E 20 20 mJ AR Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units T = +25C 1.3 A Total Power Dissipation (Note 5) P W D T = +70C 0.8 A Steady state 98 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 59 T = +25C 1.8 A Total Power Dissipation (Note 6) P W D T = +70C 1.1 A Steady state 71 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 43 C/W Thermal Resistance, Junction to Case (Note 6) R 11.8 JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics N-Channel Q2 ( T = +25C, unless otherwise specified.) A Characteristic SymbolMinTypMaxUnit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 40 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 40V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1.4 2.4 V V = V , I = 250A GS(th) DS GS D 15 24 V = 10V, I = 6A GS D Static Drain-Source On-Resistance R m DS(ON) 20 32 V = 4.5V, I = 5A GS D Diode Forward Voltage V 0.7 1.0 V V = 0V, I = 1.0A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 1060 iss V = 20V, V = 0V, DS GS Output Capacitance C 84 pF oss f = 1.0MHz Reverse Transfer Capacitance 58 C rss Gate Resistance 1.6 R V = 0V, V = 0V, f = 1.0MHz G DS GS 8.8 Total Gate Charge (V = 4.5V) Q GS g 19.1 Total Gate Charge (V = 10V) Q GS g nC V = 20V, I = 8A DS D Gate-Source Charge Q 3.0 gs Gate-Drain Charge Q 2.5 gd Turn-On Delay Time t 5.3 D(on) Turn-On Rise Time t 7.1 r V = 25V, R = 2.5 DD L nS Turn-Off Delay Time t 15.1 V = 10V, R = 3 D(off) GS G Turn-Off Fall Time 4.8 t f Body Diode Reverse Recovery Time 10.5 nS t I = 8A, di/dt = 100A/s rr F Body Diode Reverse Recovery Charge 4.15 nC Q I = 8A, di/dt = 100A/s rr F 2 of 9 November 2013 DMC4047LSD Diodes Incorporated www.diodes.com Document number: DS36206 Rev. 4 - 2