DMC6040SSDQ 60V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance I D Device BV R Max DSS DS(ON) Low On-Resistance T = +25C A 40m V = 10V 6.5A Fast Switching Speed GS Q1 N-Channel 60V 5.6A 55m V = 4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) GS -3.9A 110m V = -10V GS Halogen and Antimony Free. Green Device (Note 3) Q2 P-Channel -60V -3.6A 130m V = -4.5V GS Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Case: SO-8 automotive applications. It is qualified to AEC-Q101, supported by a Case Material: Molded Plastic, Green Molding Compound. PPAP and is ideal for use in: UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Connections: See Diagram Power Management Functions Terminals: Finish Tin Finish Annealed over Copper Leadframe. Backlighting Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) D1 D 2 SO-8 S1 D1 Pin1 G1 D1 G1 G2 S2 D2 G2 D2 S1 S2 Top View Q1 N-Channel MOSFET Q2 P-Channel MOSFET Top View Pin Configuration Ordering Information (Note 5) Part Number Case Packaging DMC6040SSDQ-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMC6040SSDQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Q1 Q2 Units Drain-Source Voltage V 60 -60 V DSS Gate-Source Voltage 20 20 V V GSS Steady T = +25C 5.1 -3.1 A A I D State 4.1 -2.5 T = +70C A Continuous Drain Current (Note 7) V = -10V GS T = +25C 6.5 -3.9 A t<10s I A D 5.2 -3.1 T = +70C A Maximum Body Diode Forward Current (Note 7) 2.1 -2.1 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 28 -19 A I DM Avalanche Current (Note 8) L = 0.1mH 17.2 -17.6 A I AS Avalanche Energy (Note 8) L = 0.1mH 14.7 15.4 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units T = +25C 1.24 A Total Power Dissipation (Note 6) W P D 0.8 TA = +70C Steady State 101 Thermal Resistance, Junction to Ambient (Note 6) R C/W JA t < 10s 61 T = +25C 1.56 A Total Power Dissipation (Note 7) P W D 1.0 T = +70C A Steady State 80 Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 49 C/W Thermal Resistance, Junction to Case (Note 7) 14.7 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics N-Channel Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 48V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V 1 3 V V = V , I = 250A GS(TH) DS GS D 33 40 V = 10V, I = 8A GS D Static Drain-Source On-Resistance m R DS(ON) 37 55 V = 4.5V, I = 5A GS D Diode Forward Voltage 0.7 1.2 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance 1,130 C ISS Output Capacitance 69 pF C V = 15V, V = 0V f = 1.0MHz OSS DS GS Reverse Transfer Capacitance 42 C RSS Gate Resistance R 1.7 V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge (V = 10V) Q 20.8 GS G Total Gate Charge (V = 4.5V) Q 9.4 GS G nC V = 30V, I = 4.3A DS D Gate-Source Charge Q 3.3 GS Gate-Drain Charge Q 3.0 GD Turn-On Delay Time 3.6 t D(ON) Turn-On Rise Time 1.8 t V = 10V, V = 30V, R = 6, R GS DD G ns Turn-Off Delay Time 20.1 I = 4.3A t D D(OFF) Turn-Off Fall Time 4.3 t F Body Diode Reverse Recovery Time 14.2 ns t I = 4.3A, dI/dt = 100A/s RR S Body Diode Reverse Recovery Charge Q 7.5 nC I = 4.3A, dI/dt = 100A/s RR S Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. UIS in production with L = 0.1mH, starting T = +25C. A 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 9 DMC6040SSDQ April 2016 Diodes Incorporated www.diodes.com Document number: DS38828 Rev. 1 - 2 ADVANCE INFORMATION