DMG1012T N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT523 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. Low Input Capacitance UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminals: Finish Matte Tin Annealed over Alloy 42 ESD Protected up to 2kV Leadframe. Solderable per MIL-STD-202, Method 208 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Terminal Connections: See Diagram Halogen and Antimony Free. Green Device (Note 3) Weight: 0.002 grams (Approximate) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) SOT523 D G S ESD PROTECTED TO 2kV ESD PROTECTION TO 2kV Top View Equivalent Circuit Top View (Note 6) Ordering Information (Note 5) Part Number Qualification Case Packaging DMG1012T-7 Commercial SOT523 3000/Tape & Reel DMG1012T-13 Commercial SOT523 10000/Tape & Reel DMG1012TQ-7 Automotive SOT523 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMG1012T Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 6 V GSS Steady T = +25C 0.63 A Continuous Drain Current (Note 7) I A D State 0.45 T = +85C A Pulsed Drain Current 3 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 7) P 0.28 W D Thermal Resistance, Junction to Ambient (Note 7) 452 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 20 V BV V = 0V, I = 250A DSS GS D 100 nA Zero Gate Voltage Drain Current T = +25C I V = 20V, V = 0V J DSS DS GS Gate-Source Leakage 1.0 A I V = 4.5V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 0.5 1.0 V V V = V , I = 250A GS(TH) DS GS D 0.3 0.4 V = 4.5V, I = 600mA GS D Static Drain-Source On-Resistance R 0.4 0.5 V = 2.5V, I = 500mA DS(ON) GS D 0.5 0.7 V = 1.8V, I = 350mA GS D Forward Transfer Admittance Y 1.4 S V = 10V, I = 400mA fs DS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 150mA SD GS S DYNAMIC CHARACTERISTICS (Note 9) 60.67 Input Capacitance C pF iss V = 16V, V = 0V, DS GS 9.68 Output Capacitance C pF oss f = 1.0MHz Reverse Transfer Capacitance 5.37 pF C rss Total Gate Charge 736.6 pC Q g V = 4.5V, V = 10V, GS DS Gate-Source Charge 93.6 pC Q gs I = 250mA D Gate-Drain Charge 116.6 pC Q gd Turn-On Delay Time 5.1 ns t D(ON) V = 10V, V = 4.5V, DD GS 7.4 Turn-On Rise Time t ns R R = 47, R = 10, L G 26.7 Turn-Off Delay Time t ns D(OFF) I = 200mA D 12.3 Turn-Off Fall Time t ns F Notes: 7. Device mounted on FR-4 PCB, with minimum recommended pad layout. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMG1012T September 2018 Diodes Incorporated www.diodes.com Document number: DS31783 Rev. 6 - 2