DMG1012UW N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-323 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminal Connections: See Diagram Below Low Input/Output Leakage Terminals: Finish Matte Tin annealed over Alloy 42 ESD Protected Up To 2KV leadframe. Solderable per MIL-STD-202, Method 208 e3 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Weight: 0.006 grams (approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Drain D Gate Gate Protection G S Source Diode TOP VIEW ESD PROTECTED TO 2kV EQUIVALENT CIRCUIT TOP VIEW Ordering Information (Note 4) Part Number Case Packaging DMG1012UW-7 SOT-323 3000 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG1012UW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 6 V GSS Steady T = +25C 1.0 A Continuous Drain Current (Note 5) A I D State 0.64 T = +85C A Pulsed Drain Current (Note 6) I 6 A DM Thermal Characteristics Characteristic Symbol Max Unit Power Dissipation (Note 3) 0.29 W P D 425 C/W Thermal Resistance, Junction to Ambient T = +25C (Note 3) R A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by junction temperature. Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 20 - - V V = 0V, I = 250A DSS GS D - - 100 nA Zero Gate Voltage Drain Current T = 25C I V = 20V, V = 0V J DSS DS GS Gate-Source Leakage - - 1.0 A I V = 4.5V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.5 - 1.0 V V V = V , I = 250A GS(th) DS GS D 0.3 0.45 V = 4.5V, I = 600mA GS D Static Drain-Source On-Resistance - 0.4 0.6 R V = 2.5V, I = 500mA DS (ON) GS D 0.5 0.75 V = 1.8V, I = 350mA GS D Forward Transfer Admittance Y - 1.4 - S V = 10V, I = 400mA fs DS D Diode Forward Voltage V - 0.7 1.2 V V = 0V, I = 150mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) - 60.67 - Input Capacitance C pF iss V = 16V, V = 0V, DS GS - 9.68 - Output Capacitance C pF oss f = 1.0MHz Reverse Transfer Capacitance C - 5.37 - pF rss Total Gate Charge - 736.6 - pC Q g V = 4.5V, V = 10V, GS DS Gate-Source Charge - 93.6 - pC Q gs I = 250mA D Gate-Drain Charge - 116.6 - pC Q gd Turn-On Delay Time - 5.1 - ns t D(on) V = 10V, V = 4.5V, DD GS 7.4 Turn-On Rise Time t - - ns r R = 47, R = 10, L G 26.7 Turn-Off Delay Time t - - ns D(off) I = 200mA D 12.3 Turn-Off Fall Time t - - ns f Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 September 2013 DMG1012UW Diodes Incorporated www.diodes.com Document number: DS31859 Rev. 3 - 2