DMG1013TQ 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I Max D BV R Max DSS DS(ON) Low Gate Threshold Voltage T = +25C A Low Input Capacitance -460mA 700m V = -4.5V GS Fast Switching Speed -20V 900m V = -2.5V -420mA GS Low Input/Output Leakage ESD Protected Up To 3kV 1300m V = -1.8V -350mA GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Case: SOT523 Automotive applications. It is qualified to AEC-Q101, supported by a Case Material: Molded Plastic, Green Molding Compound. PPAP and is ideal for use in: UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminals: Finish Matte Tin Annealed over Alloy 42 Load Switch Leadframe. Solderable per MIL-STD-202, Method 208 Power Management Functions Terminal Connections: See Diagram Weight: 0.002 grams (Approximate) D SOT523 D G S G ESD PROTECTED TO 3kV Gate Protection S Diode Top View Top View Equivalent Circuit Ordering Information (Note 5) Part Number Case Packaging DMG1013TQ-7 SOT523 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG1013TQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 6 V GSS Drain Current (Note 6) Steady T = +25C -0.46 A A I D State -0.33 T = +85C A Pulsed Drain Current (Note 7) I -6 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) P 0.27 W D Thermal Resistance, Junction to Ambient (Note 6) 461 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -20 - - V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = +25C I - - -100 nA V = -20V, V = 0V J DSS DS GS Gate-Source Leakage - - 2.0 A I V = 4.5V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage -0.5 - -1.0 V V V = V , I = -250A GS(TH) DS GS D 0.5 0.7 V = -4.5V, I = -350mA GS D Static Drain-Source On-Resistance - 0.7 0.9 R V = -2.5V, I = -300mA DS(ON) GS D 1.0 1.3 V = -1.8V, I = -150mA GS D Forward Transfer Admittance - 0.9 - S Y V = -10V, I = -250mA fs DS D Diode Forward Voltage V -0.8 -1.2 V V = 0V, I = -150mA SD GS S DYNAMIC CHARACTERISTICS (Note 9) - 59.76 - Input Capacitance C pF iss V = -16V, V = 0V, DS GS - 12.07 - Output Capacitance C pF oss f = 1.0MHz - 6.36 - Reverse Transfer Capacitance C pF rss - 580 - Total Gate Charge Q pC g V = -4.5V, V = -10V, GS DS - 104 - Gate-Source Charge pC Qgs I = -250mA D - 125 - Gate-Drain Charge pC Q gd Turn-On Delay Time - 5.1 - ns t D(ON) V = -10V, V = -4.5V, DD GS Turn-On Rise Time - 8.1 - ns t R R = 47, R = 10, L g Turn-Off Delay Time - 28.4 - ns t D(OFF) I = -200mA D 20.7 Turn-Off Fall Time t - - ns F Notes: 6. For a device surface mounted on a minimum recommended pad layout of an FR-4 PCB, in still air conditions the device is measured when operating in steady-state condition. 7. Same as note 5, except the device is pulsed at duty cycle of 1% for a pulse width of 10s. 8. Measured under pulsed conditions to minimize self-heating effect. Pulse width 300s duty cycle 2%. 9. For design aid only, not subject to production testing. 2 of 6 DMG1013TQ August 2016 Diodes Incorporated www.diodes.com Document number: DS39070 Rev. 1 - 2 NEW PRODUCT