X-On Electronics has gained recognition as a prominent supplier of DMG1023UV-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMG1023UV-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMG1023UV-7 Diodes Incorporated

DMG1023UV-7 electronic component of Diodes Incorporated
DMG1023UV-7 Diodes Incorporated
DMG1023UV-7 MOSFETs
DMG1023UV-7  Semiconductors

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See Product Specifications
Part No. DMG1023UV-7
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFET P-CHANNEL
Datasheet: DMG1023UV-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.115 ea
Line Total: USD 0.58 
Availability - 3472
Ship by Fri. 10 Jan to Wed. 15 Jan
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
3472
Ship by Fri. 10 Jan to Wed. 15 Jan
MOQ : 5
Multiples : 5
5 : USD 0.115
50 : USD 0.0936
150 : USD 0.0829
500 : USD 0.0749
3000 : USD 0.0684
6000 : USD 0.0653

20814
Ship by Wed. 01 Jan to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 0.44
10 : USD 0.2882
100 : USD 0.1595
1000 : USD 0.1375
3000 : USD 0.1078

931
Ship by Wed. 01 Jan to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 0.294
10 : USD 0.2184
100 : USD 0.1344
149 : USD 0.1148
411 : USD 0.1078
1000 : USD 0.1036

8730
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1019
6000 : USD 0.0879
9000 : USD 0.0807

1105800
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.111

1780
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 624
Multiples : 1
624 : USD 0.1041

23280
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0966
6000 : USD 0.087

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Product
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DMG1023UV-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMG1023UV-7 and other electronic components in the MOSFETs category and beyond.

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DMG1023UV DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual P-Channel MOSFET Case: SOT563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminal Connections: See Diagram Below Fast Switching Speed Terminals: Finish - Matte Tin annealed over Copper leadframe. Low Input/Output Leakage Solderable per MIL-STD-202, Method 208 Ultra-Small Surface Mount Package Weight: 0.006 grams (approximate) ESD Protected Up To 3KV Lead Free By Design/RoHS Compliant (Note 1) Halogen and Antimony FreeGree Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability D G S 2 1 1 SOT563 S G D 2 1 2 Bottom View Top View Top View ESD PROTECTED TO 3kV Ordering Information (Note 3) Part Number Case Packaging DMG1023UV-7 SOT563 3,000 / Tape & Reel DMG1023UV-13 SOT563 10,000 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Diodes Inc. s Green Policy can be found on our website at DMG1023UV Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source Voltage -20 V VDSS Gate-Source Voltage 6 V V GSS Steady T = 25C -1.03 A A Continuous Drain Current (Note 4) V = -4.5V I GS D State -0.68 T = 85C A Pulsed Drain Current (Note 5) I -3 A DM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 4) P 530 mW D Thermal Resistance, Junction to Ambient T = 25C (Note 4) R 235 C/W A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV -20 - - V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = 25C I - - -100 nA V = -20V, V = 0V J DSS DS GS Gate-Source Leakage I - - 2.0 A V = 4.5V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V -0.5 - -1.0 V V = V , I = -250A GS(th) DS GS D 0.5 0.75 V = -4.5V, I = -430mA GS D 0.7 1.05 V = -2.5V, I = -300mA GS D Static Drain-Source On-Resistance - 1.0 1.5 R V = -1.8V, I = -150mA DS (ON) GS D - 20 V = -1.7V, I = -100mA GS D - 25 V = -1.5V, I = -100mA GS D Forward Transfer Admittance - 0.9 - S Y V = -10V, I = -250mA fs DS D Diode Forward Voltage V -0.8 -1.2 V V = 0V, I = -150mA SD GS S DYNAMIC CHARACTERISTICS (Note 7) - 59.76 - Input Capacitance C pF iss V = -16V, V = 0V, DS GS - 12.07 - Output Capacitance C pF oss f = 1.0MHz - 6.36 - Reverse Transfer Capacitance C pF rss - 622.4 - Total Gate Charge Q pC g V = -4.5V, V = -10V, GS DS - 100.3 - Gate-Source Charge pC Qgs I = -250mA D - 132.2 - Gate-Drain Charge pC Q gd Turn-On Delay Time - 5.1 - ns t D(on) V = -10V, V = -4.5V, DD GS Turn-On Rise Time - 8.1 - ns t r R = 47, R = 10, L G Turn-Off Delay Time - 28.4 - ns t D(off) I = -200mA D 20.7 Turn-Off Fall Time t - - ns f Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout. 5. Repetitive rating, pulse width limited by junction temperature. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. 2 of 6 DMG1023UV April 2015 Diodes Incorporated www.diodes.com Document number: DS31975 Rev. 6 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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