DMG1026UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Low On-Resistance D V R (BR)DSS DS(ON) T = +25C Low Input Capacitance A Fast Switching Speed 1.8 V = 10V 440mA GS 60V Low Input/Output Leakage 2.1 V = 4.5V 410mA GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET is designed to minimize the on-state resistance (R ), and yet maintain superior switching DS(ON) Mechanical Data performance, making it ideal for high-efficiency power management Case: SOT563 applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Battery Operated Systems and Solid-State Relays Solderable per MIL-STD-202, Method 208 Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Terminal Connections: See Diagram Below Memories, Transistors, etc. Weight: 0.006 grams (Approximate) DC-DC Converters Power Management Functions SOT563 D1 D2 S1 D1 1 6 G1 G2 5 G1 2 G2 D2 3 4 S2 Gate Protection Gate Protection ESD PROTECTED TO 2kV S1 S2 Diode Diode Top View Bottom View Top View Q1 N-CHANNEL Q2 N-CHANNEL Pin Definition Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMG1026UV-7 SOT563 3,000 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG1026UV Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 60 V V DSS Gate-Source Voltage 20 V V GSS Steady T = +25C 410 A mA Continuous Drain Current (Note 6) V = 10V I GS D State 300 T = +85C A T = +25C 440 A Continuous Drain Current (Note 7) V = 10V t 10s I mA GS D 320 T = +85C A Steady T = +25C 380 A mA Continuous Drain Current (Note 6) V = 4.5V I GS D State 270 T = +85C A T = +25C 410 A Continuous Drain Current (Note 7) V = 4.5V t 10s I mA GS D 295 T = +85C A Pulsed Drain Current (Note 8) 1.0 A I DM Thermal Characteristics Characteristic Symbol Max Unit Power Dissipation (Note 6) 0.58 W P D 213 C/W Thermal Resistance, Junction to Ambient T = +25C (Note 6) R A JA Power Dissipation (Note 7) t 10s P 0.65 W D Thermal Resistance, Junction to Ambient T = +25C (Note 7) t 10s R 192 C/W A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 250A DSS GS D 1.0 A Zero Gate Voltage Drain Current T = +25C I V = 50V, V = 0V J DSS DS GS 50 nA V = 5V, V = 0V GS DS Gate-Source Leakage I GSS 150 nA V = 10V, V = 0V GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V 0.5 1.8 V V = V , I = 250A GS(th) DS GS D 1.2 1.8 V = 10V, I = 500mA GS D Static Drain-Source On-Resistance R DS (ON) 1.4 2.1 V = 4.5V, I = 200mA GS D Forward Transfer Admittance 80 580 mS Y V = 10V, I = 200mA fs DS D Continuous Source Current (Note 9) 200 mA - I S Diode Forward Voltage 0.8 1.3 V V V = 0V, I = 200mA SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance 32 C iss V = 25V, V = 0V, DS GS Output Capacitance 4.4 pF C oss f = 1.0MHz Reverse Transfer Capacitance C 2.9 rss Gate Resistance R 126 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge Q 0.45 g V = 4.5V, V = 10V, GS DS Gate-Source Charge Q 0.08 pC gs I = 250mA D Gate-Drain Charge Q 0.08 gd Turn-On Delay Time t 3.4 ns D(on) V = 10V, V = 30V, GS DS Turn-On Rise Time 3.4 ns t r R = 150, R = 25, L G Turn-Off Delay Time 26.4 ns t D(off) I = 200mA D Turn-Off Fall Time 16.3 ns t f Notes: 6. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 PCB with minimum recommended pad layout, measured in t 10s. 8. Repetitive rating, pulse width limited by junction temperature, 10s pulse, duty cycle = 1%. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to production testing. 2 of 6 August 2016 DMG1026UV www.diodes.com Diodes Incorporated Document number: DS35068 Rev. 8 - 2