X-On Electronics has gained recognition as a prominent supplier of DMG1029SV-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMG1029SV-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMG1029SV-7 Diodes Incorporated

DMG1029SV-7 electronic component of Diodes Incorporated
DMG1029SV-7 Diodes Incorporated
DMG1029SV-7 MOSFETs
DMG1029SV-7  Semiconductors

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See Product Specifications
Part No. DMG1029SV-7
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET 60V Comp Pair ENH 1.7 Ohm 10V 500mA
Datasheet: DMG1029SV-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.123 ea
Line Total: USD 0.62 
Availability - 979
Ship by Fri. 31 Jan to Wed. 05 Feb
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
17460
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1091

256
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 264
Multiples : 1
264 : USD 0.1105

535440
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1022
6000 : USD 0.1007
12000 : USD 0.0989
15000 : USD 0.0984
45000 : USD 0.0952

979
Ship by Fri. 31 Jan to Wed. 05 Feb
MOQ : 5
Multiples : 5
5 : USD 0.123
50 : USD 0.0981
150 : USD 0.0857
500 : USD 0.0766
3000 : USD 0.0691
6000 : USD 0.0653

207230
Ship by Wed. 22 Jan to Fri. 24 Jan
MOQ : 1
Multiples : 1
1 : USD 0.429
10 : USD 0.286
100 : USD 0.1716
1000 : USD 0.1386
3000 : USD 0.1078

2910
Ship by Wed. 22 Jan to Fri. 24 Jan
MOQ : 1
Multiples : 1
1 : USD 0.434
10 : USD 0.3528
50 : USD 0.2562
100 : USD 0.2184
114 : USD 0.1498

17460
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1091

2342550
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.111

32010
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.113

309
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 243
Multiples : 1
243 : USD 0.2673
360 : USD 0.1803
1000 : USD 0.1415
3000 : USD 0.1265

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the DMG1029SV-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMG1029SV-7 and other electronic components in the MOSFETs category and beyond.

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DMG1029SV COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I max Low On-Resistance D Device V R max (BR)DSS DS(ON) T = +25C Low Gate Threshold Voltage A Low Input Capacitance 1.7 V = 10V 500mA GS Q1 60V Fast Switching Speed 3 V = 4.5V 400mA GS Ultra-Small Surface Mount Package 4 V = -10V -360mA GS Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Q2 -60V 6 V = -4.5V -310mA GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it Case: SOT563 DS(on) Case Material: Molded Plastic,Gree Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections Indicator: See diagram General Purpose Interfacing Switch Terminals: Finish Matte Tin annealed over Copper leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 e3 Analog Switch Weight: 0.027 grams (approximate) SOT563 D G S 1 2 2 Q Q 1 2 S G D 1 1 2 Top View Bottom View Ordering Information (Note 4 & 5) Part Number Compliance Case Packaging DMG1029SV-7 Standard SOT563 3000/Tape & Reel DMG1029SVQ-7 Automotive SOT563 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG1029SV Maximum Ratings N-CHANNEL Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Steady 500 T = +25C A mA I D State 400 T = +70C A Continuous Drain Current (Note 7) V = 10V GS T = +25C 620 A t<10s I mA D T = +70C 480 A Pulsed Drain Current (Note 7) I 1000 mA DM Maximum Ratings P-CHANNEL Q2 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C -360 A mA I D State -280 T = +70C A Continuous Drain Current (Note 7) V = -10V GS T = +25C -410 A t<10s I mA D T = +70C -320 A Pulsed Drain Current (Note 7) I -650 mA DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units T = +25C 0.45 A Total Power Dissipation (Note 6) P W D T = +70C 0.28 A Steady state 281 Thermal Resistance, Junction to Ambient (Note 6) C/W R JA t<10s 210 T = +25C 1 A Total Power Dissipation (Note 7) W P D T = +70C 0.62 A Steady state 129 Thermal Resistance, Junction to Ambient (Note 7) C/W R JA t<10s 97 Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 2 of 9 August 2013 DMG1029SV Diodes Incorporated www.diodes.com Document number: DS35421 Rev. 3 - 2 NEW PRODUCT

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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