X-On Electronics has gained recognition as a prominent supplier of DMG1029SVQ-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMG1029SVQ-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.
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DMG1029SV COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I max Low On-Resistance D Device V R max (BR)DSS DS(ON) T = +25C Low Gate Threshold Voltage A Low Input Capacitance 1.7 V = 10V 500mA GS Q1 60V Fast Switching Speed 3 V = 4.5V 400mA GS Ultra-Small Surface Mount Package 4 V = -10V -360mA GS Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Q2 -60V 6 V = -4.5V -310mA GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it Case: SOT563 DS(on) Case Material: Molded Plastic,Gree Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections Indicator: See diagram General Purpose Interfacing Switch Terminals: Finish Matte Tin annealed over Copper leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 e3 Analog Switch Weight: 0.027 grams (approximate) SOT563 D G S 1 2 2 Q Q 1 2 S G D 1 1 2 Top View Bottom View Ordering Information (Note 4 & 5) Part Number Compliance Case Packaging DMG1029SV-7 Standard SOT563 3000/Tape & Reel DMG1029SVQ-7 Automotive SOT563 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG1029SV Maximum Ratings N-CHANNEL Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Steady 500 T = +25C A mA I D State 400 T = +70C A Continuous Drain Current (Note 7) V = 10V GS T = +25C 620 A t<10s I mA D T = +70C 480 A Pulsed Drain Current (Note 7) I 1000 mA DM Maximum Ratings P-CHANNEL Q2 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C -360 A mA I D State -280 T = +70C A Continuous Drain Current (Note 7) V = -10V GS T = +25C -410 A t<10s I mA D T = +70C -320 A Pulsed Drain Current (Note 7) I -650 mA DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units T = +25C 0.45 A Total Power Dissipation (Note 6) P W D T = +70C 0.28 A Steady state 281 Thermal Resistance, Junction to Ambient (Note 6) C/W R JA t<10s 210 T = +25C 1 A Total Power Dissipation (Note 7) W P D T = +70C 0.62 A Steady state 129 Thermal Resistance, Junction to Ambient (Note 7) C/W R JA t<10s 97 Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 2 of 9 August 2013 DMG1029SV Diodes Incorporated www.diodes.com Document number: DS35421 Rev. 3 - 2 NEW PRODUCT
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