DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I max D V R max (BR)DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 80m V = 4.5V -2.7A GS -20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 110m V = 2.5V -2.1A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Mechanical Data Description This MOSFET has been designed to minimize the on-state resistance Case: SOT23 (R ) and yet maintain superior switching performance, making it DS(on) Case Material: Molded Plastic, Green Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Applications Terminals Connections: See Diagram Below Weight: 0.008 grams (approximate) Backlighting Power Management Functions DC-DC Converters Motor control Drain D SOT23 G S Gate Top View Source Pin Configuration Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMG2301U-7 SOT23 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG2301U Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage -20 V V DSS Gate-Source Voltage 8 V V GSS Steady T = +25C A -2.7 Continuous Drain Current (Note 5) V = -4.5V I A GS D State -2.1 T = +70C A T = +25C Steady A -2.1 A Continuous Drain Current (Note 5) V = -2.5V I GS D State -1.7 T = +70C A Pulsed Drain Current (Note 6) -27 A I DM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) P 0.8 W D Thermal Resistance, Junction to Ambient T = +25C (Note 5) R 157 C/W A JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage -20 V BV V = 0V, I = -250A DSS GS D -1.0 Zero Gate Voltage Drain Current T = +25C I A V = -16V, V = 0V J DSS DS GS Gate-Source Leakage 100 nA I V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -0.45 -1.0 V V = V , I = -250A GS(th) DS GS D 80 V = -4.5V, I = -2.8A GS D Static Drain-Source On-Resistance m R DS (ON) 110 V = -2.5V, I = -2.0A GS D Forward Transfer Admittance Y 10 S V = -5V, I = -2.8A fs DS D Diode Forward Voltage V -0.75 -1.0 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 608 pF iss V = -6V, V = 0V DS GS Output Capacitance C 82 pF oss f = 1.0MHz Reverse Transfer Capacitance 72 pF C rss Gate Resistance 44.9 R V = 0V, V = 0V, f = 1.0MHz G GS DS Total Gate Charge 6.5 nC Q g Gate-Source Charge 0.9 nC Q V = -4.5V, V = -10V, I = -3A gs GS DS D Gate-Drain Charge Q 1.5 nC gd Turn-On Delay Time t 12.5 40 ns D(on) Turn-On Rise Time t 10.3 30 ns V = -10V, V = -4.5V, r DS GS Turn-Off Delay Time t 46.5 140 ns R = 10 , R = 1.0, I = -1A D(off) L G D Turn-Off Fall Time t 22.2 66 ns f Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by junction temperature.. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 September 2013 DMG2301U Diodes Incorporated www.diodes.com Document number: DS31848 Rev. 3 - 2 NEW PRODUCT