DMG2307LQ P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D BV R max DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 90m V = -10V GS -3.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V Halogen and Antimony Free. Green Device (Note 3) 134m V = -4.5V GS -3.1A Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: SOT23 (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic,Gree Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 General Purpose Interfacing Switch Terminal Connections Indicator: See Diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. Load Switch for Portable Devices e3 Solderable per MIL-STD-202, Method 208 Weight: 0.08 grams (Approximate) SOT23 Top View Top View Equivalent Circuit Ordering Information (Note 5) Part Number Case Packaging DMG2307LQ-7 SOT23 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMG2307LQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C -2.5 A A Continuous Drain Current (Note 6) V = -10V I GS D State -2.0 T = +70C A Steady T = +25C -3.8 A Continuous Drain Current (Note 7) V = -10V I A GS D State -3.0 T = +70C A T = +25C -4.6 A Continuous Drain Current (Note 7) V = -10V t 10sec I A GS D -3.6 T = +70C A T = +25C Steady -3.1 A A Continuous Drain Current (Note 7) V = -4.5V I GS D State -2.5 T = +70C A Pulsed Drain Current (Note 7) I -20 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 0.76 W P D Thermal Resistance, Junction to Ambient (Note 6) 159 C/W R JA Total Power Dissipation (Note 7) P 1.36 W D Thermal Resistance, Junction to Ambient (Note 7) R 94 C/W JA Total Power Dissipation (Note 7) t 10sec P 1.9 W D 65.8 C/W Thermal Resistance, Junction to Ambient (Note 7) t 10sec R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -30 V V = 0V, I = -250A DSS GS D -1.0 A Zero Gate Voltage Drain Current T = +25C I V = -30V, V = 0V C DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage -1.0 -3.0 V V V = V , I = -250 A GS(TH) DS GS D 70 90 V = -10V, I = -2.5A GS D Static Drain-Source On-Resistance m RDS(ON) 105 134 V = -4.5V, I = -2.5A GS D Forward Transfer Admittance Y 4.8 S V = -10V, I = -2.5A fs DS D Diode Forward Voltage V -0.75 -1.0 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 371.3 pF iss V = -15V, V = 0V, DS GS Output Capacitance C 51.3 pF oss f = 1.0MHz Reverse Transfer Capacitance C 45.9 pF rss Gate Resistance 17 R V = 0V, V = 0V, f = 1.0MHz g DS GS 4.0 nC Total Gate Charge (V = -4.5V) Q GS g 8.2 nC Total Gate Charge (V = -10V) Q V = -10V, V = -15V, GS g GS DS Gate-Source Charge 0.9 nC I = -3A Q D gs Gate-Drain Charge 1.2 nC Q gd Turn-On Delay Time t 4.8 ns D(ON) V = -15V, V = -10V, DS GS Turn-On Rise Time t 7.3 ns R R = 15, R = 6, L G Turn-Off Delay Time t 22.4 ns D(OFF) I = -1A D Turn-Off Fall Time t 13.4 ns F Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMG2307LQ August 2018 Diodes Incorporated www.diodes.com Document number: DS41313 Rev. 1 - 2