DMG3401LSN 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance I D V R (BR)DSS DS(on) max Low On-Resistance T = 25C A Low Input/Output Leakage 50m V = -10V -3.7A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 60m V = -4.5V -3.3A GS Halogen and Antimony Free. Green Device (Note 3) -2.7A 85m V = -2.5V GS Qualified to AEC-Q101 Standards for High Reliability Description This new generation Small-Signal enhancement mode MOSFET Mechanical Data features low on-resistance and fast switching, making it ideal for high efficiency power management applications. Case: SC59 Case Material: Molded Plastic Green Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Motor control Weight: 0.008 grams (approximate) Backlighting DC-DC Converters Power management functions Drain SC59 D Gate S G Source Top View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMG3401LSN-7 SC59 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG3401LSN Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 12 V GSS T = +25C Steady A -3.0 A Continuous Drain Current (Note 5) V = -10V I GS D State -2.3 T = +70C A Steady T = +25C -3.7 A Continuous Drain Current (Note 6) V = -10V I A GS D State -2.9 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I -30 A DM Maximum Body Diode Continuous Current (Note 6) I -1.5 A S Thermal Characteristics Characteristic Symbol Value Units (Note 5) 0.8 Total Power Dissipation P W D (Note 6) 1.2 (Note 5) 159 Thermal Resistance, Junction to Ambient R JA (Note 6) 105 C/W (Note 6) Thermal Resistance, Junction to Case 36 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage -30 - - V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = 25C I - - -1.0 A V =-30V, V = 0V J DSS DS GS Gate-Body Leakage I - - 100 nA V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -0.5 -1.0 -1.3 V V = V , I = -250A GS(th) DS GS D - 41 50 V = -10V, I = -4A GS D Static Drain-Source On-Resistance R - 47 60 m V = -4.5V, I = -3.5A DS (ON) GS D - 60 85 V = -2.5V, I = -2.5A GS D Forward Transfer Admittance Y - 12 - S V = -5V, I = -4A fs DS D Diode Forward Voltage - -0.8 -1.0 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance - 1326 - C iss Output Capacitance - 103 - pF C V = -15V, V = 0V, f = 1.0MHz oss DS GS Reverse Transfer Capacitance - 71 - C rss Gate Resistance R - 7.3 - V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge (V = -4.5V) Q - 11.6 - GS g Total Gate Charge (V = -10V) Q - 25.1 - GS g nC V = -15V, I = -4A DD D Gate-Source Charge Q - 2 - gs Gate-Drain Charge Q - 1.7 - gd Turn-On Delay Time t - 8 - D(on) Turn-On Rise Time t - 13 - r V = -15V, V = -10V, DS GS nS Turn-Off Delay Time - 71 - R = 6 , R = 3.75 t GEN L D(off) Turn-Off Fall Time - 38 - t f Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing 2 of 6 October 2012 DMG3401LSN Diodes Incorporated www.diodes.com Document number: DS35502 Rev. 4 - 2 NEW PRODUCT