DMG3406L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I Max D V R Max (BR)DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 50m V = 10V 3.6A GS Low Input/Output Leakage 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 70m V = 4.5V 2.8A GS Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance Case: SOT23 Case Material: Molded Plastic, Green Molding Compound. (R ) and yet maintain superior switching performance, making it DS(ON) UL Flammability Classification Rating 94V-0 ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Battery Charging Terminals: Finish Matte Tin Annealed over Copper e3 Leadframe. Solderable per MIL-STD-202, Method 208 Power Management Functions Terminals Connections: See Diagram Below DC-DC Converters Weight: 0.008 grams (Approximate) Portable Power Adaptors D SOT23 D G G S S Top View Top View Internal Schematic Pin Out Ordering Information (Note 4) Part Number Case Packaging DMG3406L-7 SOT23 3000/Tape & Reel DMG3406L-13 SOT23 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG3406L Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 3.6 A Continuous Drain Current (Note 6) V = 10V I A GS D State T = +70C 2.9 A I 30 A Pulsed Drain Current (Note 6) (Pulse width 10S, Duty Cycle 1%) DM Maximum Body Diode Forward Current (Note 6) I 1.4 A S Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) P 0.77 W D Thermal Resistance, Junction to Ambient T = +25C (Note 5) R 164 C/W A JA Power Dissipation (Note 6) P 1.4 W D Thermal Resistance, Junction to Ambient T = +25C (Note 6) R 90 C/W A JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1.0 A V = 30V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1.0 2.0 V V = V , I = 250A GS(TH) DS GS D 25 50 V = 10V, I = 3.6A GS D Static Drain-Source On-Resistance R m DS (ON) 31 70 V = 4.5V, I = 2.8A GS D Diode Forward Voltage V 0.75 1.0 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 495 pF iss V = 15V, V = 0V, DS GS Output Capacitance C 50 pF oss f = 1.0MHz Reverse Transfer Capacitance C 43 pF rss V = 0V, V = 0V, f = 1MHz Gate Resistance R 2.0 DS GS g Total Gate Charge (V = 4.5V) Q 5.3 nC GS g Total Gate Charge (V = 10V) Q 11.2 nC GS g V = 15V, I = 3.6A DS D Gate-Source Charge Q 1.2 nC gs Gate-Drain Charge Q 1.9 nC gd Turn-On Delay Time t 2.3 ns D(ON) Turn-On Rise Time t 3.3 ns R V = 15V, V = 10V, DD GS R = 2.2, R = 3 L G Turn-Off Delay Time t 10.3 ns D(OFF) Turn-Off Fall Time t 2.3 ns F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 DMG3406L January 2015 Diodes Incorporated www.diodes.com Document number: DS37639 Rev. 2 - 2 NEW PRODUCT