DMG3407SSN P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D BV R max DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 50m V = -10V -4.0A Low Input/Output Leakage GS -30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -3.3A 72m V = -4.5V GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications Case: SC59 This MOSFET has been designed to minimize the on-state resistance Case Material: Molded Plastic, Green Molding Compound. (R ) and yet maintain superior switching performance, making it DS(ON) ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Load Switch Terminals: Finish Matte Tin Annealed over Copper Leadframe. e3 Solderable per MIL-STD-202, Method 208 DC-DC Converters Terminal Connections: See Diagram Power Management Functions Weight: 0.014 grams (Approximate) D ra in SC59 D G a te S o u rce G S Top View Pin Configuration Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMG3407SSN-7 SC59 3000 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG3407SSN Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C -4.0 A I A D State -3.2 T = +70C A Continuous Drain Current (Note 6) V = -10V GS T = +25C -4.6 A t<10s A I D -3.6 T = +70C A Steady T = +25C -3.3 A I A D State -2.6 T = +70C A Continuous Drain Current (Note 6) V = -4.5V GS T = +25C -3.9 A t<10s A I D -3.1 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -30 A DM Maximum Body Diode Forward Current (Note 6) I -2.0 A S Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit T = +25C 1.1 A Total Power Dissipation (Note 5) W P D 0.7 T = +70C A Steady state 166 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 118 1.8 T = +25C A Total Power Dissipation (Note 6) P W D 1.1 T = +70C A Steady state 98 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 71 C/W Thermal Resistance, Junction to Case (Note 6) 18 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise stated.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage -30 - - V BVDSS VGS = 0V, ID = -250A - - -1 A Zero Gate Voltage Drain Current, T = +25C I V = -30V, V = 0V J DSS DS GS Gate-Source Leakage - - 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage -1.0 -1.5 -2.1 V V V = V , I = -250A GS(TH) DS GS D - 39 50 V = -10V, I = -4.1A GS D Static Drain-Source On-Resistance R m DS(ON) - 56 72 V = -4.5V, I = -3.0A GS D Forward Transfer Admittance Y - 8.2 - S V = -5V, I = -4A fs DS D Diode Forward Voltage V - -0.75 -1.1 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 466 582 700 iss V = -15V, V = 0V, DS GS Output Capacitance C 80 114 148 pF oss f = 1.0MHz Reverse Transfer Capacitance C 47 76 105 rss Gate Resistance 2 5 8 Rg VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge 10.6 13.3 16 Q V = -10V, V = -15V, I = -4A g GS DS D Total Gate Charge 5.2 6.5 8.5 Q g nC Gate-Source Charge 1.3 1.7 2 Q V = -4.5V, V = -15V,I = -4A gs GS DS D Gate-Drain Charge 1.1 1.9 2.7 Q gd Turn-On Delay Time - 6.0 - t D(ON) Turn-On Rise Time t - 12.9 - V = -10V, V = -15V, R GS DS ns Turn-Off Delay Time t - 35.4 - R = 3.6, R = 3 D(OFF) L G Turn-Off Fall Time t - 30.7 - F Reverse Recovery Time t 6.8 8.5 10.2 ns RR I = 4A, di/dt = 100A/s F Reverse Recovery Charge 5.5 7.0 8.5 nC QRR Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. The power dissipation P is based on t<10s R D JA. 6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2 oz. copper, single sided. The power dissipation P is based on t<10s R D JA. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 July 2016 DMG3407SSN www.diodes.com Diodes Incorporated Document number: DS35135 Rev. 6 - 2 ADVANCE INFORMATION