DMG3414U N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT23 25m V = 4.5V Case Material: Molded Plastic, Green Molding Compound. GS 29m V = 2.5V UL Flammability Classification Rating 94V-0 GS 37m V = 1.8V Moisture Sensitivity: Level 1 per J-STD-020D GS Low Input Capacitance Terminals: Finish Matte Tin annealed over Copper leadframe. e3 Fast Switching Speed Solderable per MIL-STD-202, Method 208 Low Input/Output Leakage Terminals Connections: See Diagram Below Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.008 grams (approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Drain D Gate S G Source Internal Schematic TOP VIEW TOP VIEW Ordering Information (Note 4) Part Number Case Packaging DMG3414U-7 SOT23 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG3414U Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 8 V GSS 4.2 Steady T = +25C A Continuous Drain Current (Note 5) A I D State 3.2 T = +70C A Pulsed Drain Current (Note 6) I 30 A DM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) 0.78 W P D Thermal Resistance, Junction to Ambient T = +25C R 162 C/W A JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = 25 C I 1.0 A V = 20V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.5 0.9 V V = V , I = 250A GS(th) DS GS D 19 25 V = 4.5V, I = 8.2A GS D Static Drain-Source On-Resistance R 22 29 m V = 2.5V, I = 3.3A DS (ON) GS D 28 37 V = 1.8V, I = 2.0A GS D Forward Transfer Admittance 7 S Y V = 10V, I = 4A fs DS D DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 829.9 pF C iss V = 10V, V = 0V DS GS Output Capacitance 85.3 pF C oss f = 1.0MHz Reverse Transfer Capacitance 81.2 pF C rss Total Gate Charge Q 9.6 nC g Gate-Source Charge Q 1.5 nC V = 4.5V, V = 10V, I = 8.2A gs GS DS D Gate-Drain Charge Q 3.5 nC gd Turn-On Delay Time t 8.1 ns D(on) Turn-On Rise Time t 8.3 ns r V = 10V, V = 4.5V, DD GS R = 10 , R = 6 , I = 1A Turn-Off Delay Time t 40.1 ns L G D D(off) Turn-Off Fall Time 9.6 ns t f Notes: 5. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t 10s. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 September 2013 DMG3414U Diodes Incorporated www.diodes.com Document number: DS31739 Rev. 4 - 2 NEW PRODUCT