DMG3415UFY4Q P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I max Low On-Resistance D V R max (BR)DSS DS(ON) T = +25C A Low Input Capacitance Fast Switching Speed 39m V = -4.5V -2.5A GS Low Input/Output Leakage 52m V = -2.5V -2.1A GS ESD Protected Up To 3kV -16V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 65m V = -1.8V GS -1.8A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(ON) Case: X2-DFN2015-3 ideal for high-efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminals: Finish NiPdAu over Copper Leadframe. Solderable e4 DC-DC Converters per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.008 grams (Approximate) D S G D G ESD PROTECTED TO 3kV Gate Protection S Diode Top View Bottom View Internal Schematic (Top View) Equivalent Circuit Ordering Information (Note 5) Part Number Case Packaging DMG3415UFY4Q-7 X2-DFN2015-3 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG3415UFY4Q Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -16 V DSS Gate-Source Voltage V 8 V GSS Steady T = +25C -2.5 A Continuous Drain Current (Note 7) V = -4.5V I A GS D State -2.2 T = +70C A Pulsed Drain Current (Note 7) -12 A I DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) P W D Steady Thermal Resistance, Junction to Ambient (Note 6) C/W R JA State Total Power Dissipation (Note 7) P W D Steady Thermal Resistance, Junction to Ambient (Note 7) R JA State C/W Thermal Resistance, Junction to Case (Note 7) R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -16 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = +25C I -1.0 A V = -16V, V = 0V J DSS DS GS 10 A V = 8V, V = 0V GS DS Gate-Source Leakage I GSS 500 nA V = 5V, V = 0V GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage -0.3 -0.55 -1.0 V V V = V , I = -250A GS(TH) DS GS D 31 39 V = -4.5V, I = -4.0A GS D Static Drain-Source On-Resistance 40 52 m R V = -2.5V, I = -3.5A DS(ON) GS D 51 65 V = -1.8V, I = -2.0A GS D Forward Transfer Admittance Y 7.9 S V = -5V, I = -2.5A fs DS D DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 282 pF iss V = -10V, V = 0V DS GS Output Capacitance C 152 pF oss f = 1.0MHz Reverse Transfer Capacitance C 38 pF rss Gate Resistance R 250 V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge 10 nC Q g Gate-Source Charge 1.5 nC Q V = -4.5V, V = -10V, I = -4A gs GS DS D Gate-Drain Charge 2.4 nC Q gd Turn-On Delay Time 79 ns t D(ON) Turn-On Rise Time 175 ns t V = -10V, V = -4.5V, R DS GS Turn-Off Delay Time t 885 ns R = 2.5, R = 3.0 D(OFF) D G Turn-Off Fall Time t 568 ns F Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 DMG3415UFY4Q January 2016 Diodes Incorporated www.diodes.com Document number: DS38608 Rev. 1 - 2 NEW PRODUCT