DMG3N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance BV I DSS D R Max DS(ON) High BV Rating for Power Application ( TJ Max) TC = +25C DSS Low Input Capacitance 650V 3.5 V = 10V 2.8A GS Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please Description and Applications contact us or your local Diodes representative. DMG3N60SJ3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 600 V DSS Gate-Source Voltage 30 V VGSS Steady TC = +25C 2.8 A Continuous Drain Current (Note 5) VGS = 10V ID State 1.8 TC = +100C Steady Continuous Drain Current (Note 5) V = 10V T = +25C I 0.7 A GS A D State Maximum Body Diode Forward Current (Note 5) I 2.5 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 4.2 A DM Avalanche Current, L = 60mH (Note 7) 1.0 A IAS Avalanche Energy, L = 60mH (Note 7) 33 mJ EAS Peak Diode Recovery dv/dt dv/dt 5 V/ns Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit T = +25C 41 C Total Power Dissipation (Note 5) W PD T = +100C 16 C Total Power Dissipation (Note 5) T = +25C P 2.5 W A D 49 Thermal Resistance, Junction to Ambient (Note 6) RJA C/W Thermal Resistance, Junction to Case (Note 5) 3.0 RJC Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 600 V BVDSS VGS = 0V, ID = 250A Zero Gate Voltage Drain Current 1 A IDSS VDS = 600V, VGS = 0V Gate-Source Leakage 100 nA IGSS VGS = 30V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 2.0 3.0 4.0 V VGS(TH) VDS = VGS, ID = 250A Static Drain-Source On-Resistance 2.9 3.5 RDS(ON) VGS = 10V, ID = 1.5A Diode Forward Voltage 0.87 1.5 V VSD VGS = 0V, IS = 3.0A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance 354 Ciss Output Capacitance C 41 pF V = 25V, f = 1.0MHz, V = 0V oss DS GS Reverse Transfer Capacitance C 4 rss Gate Resistance R 2.6 V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge Q 12.6 G V = 480V, I = 2.5A, DD D Gate-Source Charge 1.7 nC QGS VGS = 10V Gate-Drain Charge 7.1 QGD Turn-On Delay Time 10.6 tD(ON) Turn-On Rise Time 22 tR V = 300V, R = 25, I = 2.5A, DD G D ns Turn-Off Delay Time 34 tD(OFF) VGS = 10V Turn-Off Fall Time 28 tF Body Diode Reverse Recovery Time t 198 ns dI/dt = 100A/s, V = 100V, RR DS Body Diode Reverse Recovery Charge Q 952 nC IF = 2.5A RR Notes: 5. Device mounted on infinite heatsink. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 7. Guaranteed by design. Not subject to production testing. 8. Short duration pulse test used to minimize self-heating effect. 2 of 7 DMG3N60SJ3 June 2020 Diodes Incorporated www.diodes.com Document number: DS39314 Rev. 3 - 2