DMG4466SSSL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D V R max (BR)DSS DS(ON) T = +25C Low Input Capacitance A Fast Switching Speed 23m V = 10V 10A GS 30V Low Input/Output Leakage 33m V = 4.5V 8A GS Low Gate Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability This MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(ON) ideal for high efficiency power management applications. Mechanical Data Case: SO-8 Applications Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Connections Indicator: See diagram DC-DC Converters Terminals: Finish Matte Tin annealed over Copper leadframe. e3 Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (approximate) D S D SO-8 S D G S D G D S Top View Equivalent circuit Internal Schematic Top View Ordering Information (Note 4) Part Number Case Packaging DMG4466SSSL-13 SO-8 2500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG4466SSSL Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS T = +25C Steady A 10 Continuous Drain Current (Note 5) I A D State 6 T = +85C A Pulsed Drain Current (Note 5) 60 A I DM Avalanche Current (Notes 6) 16 A I AR Repetitive Avalanche Energy (Notes 6) L = 0.1mH E 12.8 mJ AR Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) 1.42 W P D Thermal Resistance, Junction to Ambient TA = 25C (Note 5) R 88.4 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 30V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1.0 1.45 2.4 V V = V , I = 250 A GS(th) DS GS D V = 10V, I = 10A 15 23 GS D Static Drain-Source On-Resistance m R DS (ON) 25 33 V = 4.5V, I = 7.5A GS D Forward Transfer Admittance Y 2.5 S V = 5V, I = 10A fs DS D Diode Forward Voltage 0.69 1 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 478.9 pF C iss V = 15V, V = 0V, DS GS Output Capacitance 96.7 pF C oss f = 1.0MHz Reverse Transfer Capacitance 61.4 pF C rss Gate Resistance R 0.4 1.1 1.6 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 4.5V) Q 5.0 8 GS g nC Total Gate Charge (V = 10V) Q 10.5 17 GS g V = 15V, V = 10V, I = 10A DS GS D Gate-Source Charge Q 1.8 nC gs Gate-Drain Charge Q 1.6 nC gd Turn-On Delay Time t 2.9 ns D(on) Turn-On Rise Time 7.9 ns t V = 10V, V = 15V, r GS DS Turn-Off Delay Time 14.6 ns R = 3 , R = 1.5 t G L D(off) Turn-Off Fall Time 3.1 ns t f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. I and E rating are based on low frequency and duty cycles to keep T = 25C AR AR J 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 September 2013 DMG4466SSSL Diodes Incorporated www.diodes.com Document number: DS32244 Rev. 3 - 2