DMG4468LK3 Green N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: TO252 Case Material: Molded Plastic, Green Molding Compound. Low Input Capacitance UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminals Connections: See Diagram Lead-Free Finish RoHS Compliant (Notes 1 & 2) Terminals: Matte Tin Finish annealed over Copper leadframe. Halogen and Antimony Free. Green Device (Note 3) Solderable per MIL-STD-202, Method 208 Qualified to AEC-Q101 Standards for High Reliability Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.33 grams (approximate) D D G D S G S Equivalent Circuit TOP VIEW PIN OUT -TOP VIEW Ordering Information (Note 4) Part Number Case Packaging DMG4468LK3-13 TO252 2500 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMG4468LK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage 20 V V GSS Steady T = +25C 9.7 A Continuous Drain Current (Note 5) I A D State 6.3 T = +85C A Pulsed Drain Current (Note 6) 48 A I DM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) 1.68 W P D Thermal Resistance, Junction to Ambient T = +25C R 74.3 C/W A JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by junction temperature. Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 30 - - V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I - - 1.0 A V = 30V, V = 0V J DSS DS GS Gate-Source Leakage - - 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1.05 - 1.95 V V = V , I = 250A GS(th) DS GS D 11 16 VGS = 10V, ID = 11.6A Static Drain-Source On-Resistance R - m DS (ON) 17 25 V = 4.5V, I = 10A GS D Forward Transfer Admittance Y - 8 - S V = 10V, I = 9A fs DS D Diode Forward Voltage - 0.73 1.0 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) - - Input Capacitance C 867 pF iss V = 15V, V = 0V, DS GS - - Output Capacitance C 85 pF oss f = 1.0MHz Reverse Transfer Capacitance - 81 - pF C rss - - Gate Resistance R 1.39 V = 0V, V = 0V, f = 1MHz g DS GS - - Total Gate Charge 18.85 nC Q g V = 10V, V = 15V, GS DS Gate-Source Charge - 2.59 - nC Q gs ID = 11.6A - - Gate-Drain Charge Q 6.15 nC gd Turn-On Delay Time - 5.46 - ns t D(on) Turn-On Rise Time - 14.53 - ns t V = 15V, V = 10V, r DD GS - - Turn-Off Delay Time t 18.84 ns R = 1.3, R = 3 D(off) L G Turn-Off Fall Time - 6.01 - ns t f Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 June 2013 DMG4468LK3 Diodes Incorporated www.diodes.com Document number: DS31958 Rev. 3 - 2 NEW PRODUCT