DMG4496SSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D V (BR)DSS R max DS(ON) T = +25C Low Input Capacitance A Fast Switching Speed 21.5m V = 10V 10A GS 30V Low Input/Output Leakage 29m V = 4.5V 8A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(ON) Mechanical Data ideal for high efficiency power management applications. Case: SO-8 Case Material: Molded Plastic,Gree Molding Compound. Applications UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminal Connections Indicator: See diagram Power Management Functions Terminals: Finish Matte Tin annealed over Copper leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 e3 Weight: 0.074 grams (approximate) D S D SO-8 S D G S D G D S Top View Equivalent circuit Internal Schematic Top View Ordering Information (Note 4 & 5) Part Number Compliance Case Packaging DMG4496SSS-13 Standard SO-8 2500 / Tape & Reel DMG4496SSSQ-13 Automotive SO-8 2500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG4496SSS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 25 V GSS T = +25C Steady A 10 Continuous Drain Current (Note 6) I A D State 6 T = +85C A Pulsed Drain Current (Note 7) 60 A I DM Avalanche Current (Notes 7 & 8) 8 A I AR Repetitive Avalanche Energy (Notes 7 & 8) L = 0.1mH E 3.2 mJ AR Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 6) 1.42 W P D Thermal Resistance, Junction to Ambient T = +25C (Note 6) R 88.49 C/W A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage 30 V BV V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 30V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 25V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V 0.8 1.2 2.0 V V = V , I = 250 A GS(th) DS GS D V = 10V, I = 10A 16 21.5 GS D Static Drain-Source On-Resistance m R DS(ON) 22 29 V = 4.5V, I = 7.5A GS D Forward Transfer Admittance Y 11.7 S V = 5V, I = 10A fs DS D Diode Forward Voltage V 0.70 1 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C 493.5 pF iss V =15V, V = 0V, DS GS Output Capacitance 94.5 pF C oss f = 1.0MHz Reverse Transfer Capacitance 50.4 pF C rss Gate Resistance 2.86 R V =0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 4.5V) Q 4.7 V = 15V, V = 4.5V, ID =10A GS g DS GS nC Total Gate Charge (V = 10V) Q 10.2 GS g Gate-Source Charge Q 1.4 nC V = 15V, V = 10V, ID =10A gs DS GS Gate-Drain Charge Q 1.7 nC gd Turn-On Delay Time t 4.76 ns D(on) Turn-On Rise Time t 3.64 ns r V = 10V, V = 15V, GS Ds Turn-Off Delay Time t 19.5 ns R = 6 , R = 15 , D(off) G L Turn-Off Fall Time 4.9 ns t f 2 Notes: 6. Device mounted on 1 in. FR-4 board with 2oz. Copper, in a still air environment T = +25C. The value in any given application depends on the A user s specific board design. 7. Repetitive rating, pulse width limited by junction temperature. 8. I and E rating are based on low frequency and duty cycles to keep T = 25C AR AR J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to production testing. 2 of 6 September 2013 DMG4496SSS Diodes Incorporated www.diodes.com Document number: DS32048 Rev. 5 - 2 NEW PRODUCT