DMG4511SK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D V R (BR)DSS DS(ON) Low Gate Threshold Voltage T = 25C A Low Input Capacitance 35V 35m V = 10V 13A GS Fast Switching Speed Low Input/Output Leakage -35V 45m V = -10V -12A GS Complementary Pair MOSFET Lead Free/RoHS Compliant (Note 1) Gree Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Description and Applications This new generation MOSFET has been designed to minimize the on- state resistance (R ) and yet maintain superior switching DS(on) Mechanical Data performance, making it ideal for high efficiency power management applications. Case: TO252-4L Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Connections: See Diagram Below Power management functions Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.328 grams (approximate) D D 2 1 G G 2 1 S S 2 1 Bottom View N-Channel MOSFET P-Channel MOSFET Top View Ordering Information (Note 3) Part Number Case Packaging DMG4511SK4-7 TO252-4L 3000 / Tape & Reel Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at DMG4511SK4 Maximum Ratings N-CHANNEL, Q1 T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source Voltage V 35 V DSS Gate-Source Voltage V 20 V GSS Steady T = 25C 5.3 A A Continuous Drain Current (Note 4) V = 10V I GS D State 4.2 T = 70C A Steady T = 25C 8.6 A Continuous Drain Current (Note 5) V = 10V I A GS D State 6.8 T = 70C A T = 25C A 13 t 10s A Continuous Drain Current (Note 5) V = 10V I GS D 11 T = 70C A Steady T = 25C 6.3 A Continuous Drain Current (Note 5) V = 4.5V I A GS D State 5.0 T = 70C A T = 25C A 9.3 t 10s A Continuous Drain Current (Note 5) V = 4.5V I GS D 7.4 T = 70C A Pulsed Drain Current (Note 6) 50 A I DM Maximum Ratings P-CHANNEL, Q2 T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source Voltage -35 V V DSS Gate-Source Voltage 20 V V GSS Steady T = 25C -5.0 A A Continuous Drain Current (Note 4) V = -10V I GS D State -3.8 T = 70C A Steady T = 25C -7.8 A Continuous Drain Current (Note 5) V = -10V I A GS D State -6.2 T = 70C A T = 25C -12 A t 10s A Continuous Drain Current (Note 5) V = -10V I GS D -10 T = 70C A Steady T = 25C -6.5 A Continuous Drain Current (Note 5) V = -4.5V I A GS D State -5.2 T = 70C A T = 25C A -9.6 t 10s A Continuous Drain Current (Note 5) V = -4.5V I GS D -7.7 T = 70C A Pulsed Drain Current (Note 6) I -50 A DM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 4) 1.54 W P D 81.3 C/W Thermal Resistance, Junction to Ambient T = 25C (Note 4) R A JA Power Dissipation (Note 5) 4.1 W P D 30.8 Thermal Resistance, Junction to Ambient T = 25C (Note 5) R C/W A JA Power Dissipation (Note 5) t 10s P 8.9 W D 14 Thermal Resistance, Junction to Ambient T = 25C (Note 5) t 10s R C/W A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 5. Device mounted on 2 x 2 FR-4 PCB with high coverage 2 oz. Copper, single sided. 6. Repetitive rating, pulse width limited by junction temperature. 2 of 9 July 2011 DMG4511SK4 Diodes Incorporated www.diodes.com Document number: DS32042 Rev. 4 - 2