DMG4822SSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance Low Input Capacitance I max D V R max (BR)DSS DS(ON) Low Input/Output leakage T = +25C A Low Gate Resistance 30V 20m V = 10V 10A GS Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(on) Mechanical Data ideal for high efficiency power management applications. Case: SO-8 Case Material: Molded Plastic,Gree Molding Compound. Applications UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 General Purpose Interfacing Switch Terminal Connections Indicator: See diagram Power Management Functions Terminals: Finish NiPdAu over Copper leadframe. Solderable DC-DC Converters per MIL-STD-202, Method 208 Analog Switch Weight: 0.072 grams (approximate) D1 D2 S1 D1 G1 D1 G2 G1 S2 D2 G2 D2 S1 S2 TOP VIEW N-Channel MOSFET N-Channel MOSFET Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMG4822SSD-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG4822SSD Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 25 V GSS T = +25C Steady 10 A A Continuous Drain Current (Note 5) V = 10V I GS D State 6.6 T = +85C A Pulsed Drain Current (Note 6) I 60 A DM Avalanche Current (Note 7 & 8) I 1.68 A AR Repetitive Avalanche Energy L= 0.3mH (Note 7 & 8) E 12.8 mJ AR Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 1.42 W D Thermal Resistance, Junction to Ambient (Note 5) R 88.4 C/W JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV 30 - - V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current I - - 1 A V = 30V, V = 0V DSS DS GS Gate-Source Leakage I - - 100 nA V = 25V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V 1 - 3 V V = V , I = 250 A GS(th) DS GS D - 13.4 20 V = 10V, I = 8.5A GS D Static Drain-Source On-Resistance m R DS (ON) - 19.5 31 V = 4.5V, I = 6A GS D Forward Transfer Admittance Y - 20 - mS V = 5V, I = 8.5A fs DS D Diode Forward Voltage - 0.4 1.0 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance - 478.9 - pF C iss V = 16V, V = 0V, DS GS Output Capacitance - 96.7 - pF C oss f = 1MHz Reverse Transfer Capacitance - 61.4 - pF C rss Gate resistance R 1.1 V = 0V, V = 0V,f = 1MHz g DS GS Total Gate Charge (V = 4.5V) Q 5 - nC GS g V = 10V, V = 15V, GS DS Total Gate Charge (V = 10V) Q - 10.5 - nC GS g I =8.5A D Gate-Source Charge Q - 1.8 - nC gs Gate-Drain Charge Q - 1.6 - nC gd Turn-On Delay Time t - 2.9 - ns D(on) Turn-On Rise Time t - 7.9 - ns r V = 15V, V = 10V, DS GS Turn-Off Delay Time - 14.6 - ns R = 1.8, R = 3 , t L G D(off) Turn-Off Fall Time - 3.1 - ns t f Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1% 7. Repetitive rating, pulse width limited by junction temperature. 8. I and E rating are based on low frequency and duty cycles to keep T=+25C AR AR j 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 February 2014 DMG4822SSD Diodes Incorporated www.diodes.com Document number: DS35403 Rev. 2 - 2 NEW PRODUCT