ME DMG5802LFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I D V R (BR)DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 15m V = 4.5V 6.5A GS 24V Low Input/Output Leakage 5.6A 20m V = 2.5V GS ESD Protected up to 3kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET has been designed to minimize the on- state resistance (R ) and yet maintain superior switching DS(on) performance, making it ideal for high efficiency power management Mechanical Data applications. Case: W-DFN5020-6 Case Material: Molded Plastic, Green Molding Compound. UL Applications Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Connections: See Diagram Below Power management functions Weight: 0.03 grams (approximate) G1 S1 S1 D1 D2 W-DFN5020-6 D1/D2 G2 G1 S1 S2 G2 S2 S2 Top View ESD PROTECTED TO 3kV Bottom View Top View Equivalent Circuit Pin-Out Ordering Information (Note 4) Part Number Case Packaging DMG5802LFX-7 W-DFN5020-6 3000 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG5802LFX Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 24 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 6.5 A Continuous Drain Current (Note 5) V = 4.5V I A GS D State 5.2 T = +70C A Steady T = +25C 5.6 A A Continuous Drain Current (Note 5) V = 2.5V I GS D State 4.5 T = +70C A Pulsed Drain Current (Note 6) I 70 A DM Thermal Characteristics Characteristic Symbol Max Unit Power Dissipation (Note 5) P 0.98 W D Thermal Resistance, Junction to Ambient T = +25C (Note 5) R 126.5 C/W A JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 24 V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1.0 A V = 24V, V = 0V J DSS DS GS Gate-Source Leakage I 10 A V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.6 0.9 1.5 V V V = V , I = 250 A GS(th) DS GS D 11 15 V = 4.5V, I = 6.5A GS D 12 17 V = 4V, I = 5.6A GS D Static Drain-Source On-Resistance R m DS (ON) 13 18 V = 3.1V, I = 5.6A GS D 14 20 V = 2.5V, I = 5.6A GS D Forward Transfer Admittance Y 17 S V = 5V, I = 6.5A fs DS D Diode Forward Voltage V 0.6 0.9 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 1066.4 iss V = 15V, V = 0V, DS GS Output Capacitance C 132.0 pF oss f = 1.0MHz Reverse Transfer Capacitance C 127.1 rss Gate Resistance 1.47 R V = 0V, V = 0V, f = 1MHz g DS GS 14.5 Total Gate Charge V = 4.5V Q V = 4.5V, V = 15V, I = 5.8A GS g GS DS D 31.3 Total Gate Charge V = 10V Q GS g nC V = 10V, V = 15V, GS DS Gate-Source Charge 2.0 Q gs I = 5.8A D Gate-Drain Charge Q 3.1 gd Turn-On Delay Time t 3.69 ns D(on) Turn-On Rise Time t 13.43 ns V = 10V, V = 15V, r GS DS Turn-Off Delay Time t 32.18 ns R = 2.1, R = 3 D(off) L G Turn-Off Fall Time t 22.45 ns f Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 November 2013 DMG5802LFX Diodes Incorporated www.diodes.com Document number: DS35009 Rev. 5 - 2