DMG6301UDW 25V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I D V R (BR)DSS DS(ON) T = +25C A Low Gate Threshold Voltage 4 V = 4.5V 0.24A GS Low Input Capacitance 25V 5 V = 2.7V 0.22A GS Fast Switching Speed Small Surface Mount Package ESD Protected Gate (>6kV Human Body Model) Description Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) This new generation MOSFET has been designed to minimize the Halogen and Antimony Free. Green Device (Note 3) on-state resistance (R ) and yet maintain superior switching DS(ON) Qualified to AEC-Q101 Standards for High Reliability performance, making it ideal for high efficiency power management applications. Mechanical Data Case: SOT363 Applications Case Material: Molded Plastic. UL Flammability Classification DC-DC Converters Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 Battery Operated Systems and Solid-State Relays Terminals: Matte Tin Finish annealed over Alloy 42 leadframe Drivers: Relays, Solenoids, Lamps, Hammers, Displays, (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Memories, Transistors, etc Terminal Connections: See Diagram Weight: 0.006 grams (approximate) D1 D2 D G S 2 1 1 SOT363 G2 G1 Gate Protection S G D Gate Protection 2 2 1 S2 S1 Diode Diode ESD HBM >6kV Top View Equivalent circuit Top View Internal Schematic Ordering Information (Note 4) Part Number Compliance Case Packaging DMG6301UDW-7 Standard SOT363 3,000/Tape & Reel DMG6301UDW-13 Standard SOT363 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG6301UDW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 25 V DSS Gate-Source Voltage V 8 V GSS T = +25C 0.24 A A Continuous Drain Current, V = 4.5V (Note 6) I GS D 0.19 T = +70C A T = +25C 0.22 A Continuous Drain Current, V = 2.7V (Note 6) I A GS D 0.17 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I 1.5 A DM Thermal Characteristics Characteristic Symbol Value Units (Note 5) 0.3 Total Power Dissipation W P D (Note 6) 0.37 (Note 5) 409 Thermal Resistance, Junction to Ambient R JA (Note 6) 334 C/W (Note 6) Thermal Resistance, Junction to Case R 137 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic SymbolMin Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 25 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 20V, V = 0V DSS DS GS Gate-Body Leakage 100 nA I V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.65 0.85 1.5 V V V = V , I = 250 A GS(th) DS GS D 3.8 4 V = 4.5V, I = 0.4A GS D Static Drain-Source On-Resistance R DS(ON) 3.1 5 V = 2.7V, I = 0.2A GS D Forward Transconductance Y 1 S V = 5V, I =0.4A fs DS D Diode Forward Voltage V 0.76 1.2 V V = V , I = 0.25A SD DS GS D DYNAMIC CHARACTERISTICS (Note 8) 27.9 Input Capacitance C iss V = 10V, V = 0V, DS GS 6.1 Output Capacitance C pF oss f = 1MHz 2 Reverse Transfer Capacitance C rss 0.36 Total Gate Charge Q g V = 4.5V, V = 5V, GS DS Gate-Source Charge 0.06 nC Q gs I = 0.2A D Gate-Drain Charge 0.04 Q gd Turn-On Delay Time 2.9 t D(on) Turn-On Rise Time 1.8 t r V = 4.5V, V = 6V GS DS nS 6.6 I = 0.5A, R = 50 Turn-Off Delay Time t D G D(off) 2.3 Turn-Off Fall Time t f Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 February 2014 DMG6301UDW Diodes Incorporated www.diodes.com Document number: DS36288 Rev. 1 - 2 NEW PRODUCT