DMG6402LDM N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low R Case: SOT-26 DS(ON) Low Input Capacitance Case Material - Molded Plastic. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Low Input/Output Leakage Method 208 Lead Free By Design/RoHS Compliant (Note 1) Terminal Connections: See Diagram Qualified to AEC-Q101 Standards for High Reliability Marking Information: See Page 2 Gree Device (Note 2) Ordering Information: See page 2 Weight: 0.008 grams (approximate) SOT-26 D D S D D G TOP VIEW TOP VIEW Internal Schematic Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source Voltage 30 V V DSS Gate-Source Voltage V V 20 GSS Steady T = 25C 5.3 A Continuous Drain Current (Note 3) I A D State 4.2 T = 70C A Pulsed Drain Current (Note 4) I 31 A DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 3) P 1.12 W D Thermal Resistance, Junction to Ambient T = 25C (Note 3) 111 C/W A R JA Operating and Storage Temperature Range -55 to +150 T , T C J STG Notes: 1. No purposefully added lead. 2. Diodes Inc sGree policy can be found on our website at DMG6402LDM Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage 30 - - V BV V = 0V, I = 250 A DSS GS D A Zero Gate Voltage Drain Current T = 25C I - - 1.0 V = 30V, V = 0V J DSS DS GS Gate-Source Leakage I - - 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V 1.0 1.5 2.0 V V = V , I = 250 A GS(th) DS GS D V = 10V, I = 7A 22 27 GS D m Static Drain-Source On-Resistance R - DS (ON) 32 40 V = 4.5V, I = 5.6A GS D Forward Transfer Admittance Y - 10 - S V = 5V, I = 7A fs DS D Diode Forward Voltage V - 0.75 1.0 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance C - 404 - pF iss V =15V, V = 0V, DS GS Output Capacitance C - 52 - pF oss f = 1.0MHz Reverse Transfer Capacitance - 45 - pF C rss Gate Resistance R - 1.51 - V =0V, V = 0V, f = 1MHz g DS GS Total Gate Charge Q - 9.2 - nC g Gate-Source Charge - 1.2 - nC Q V =10V, V = 15V, ID =5.8A gs GS DS Gate-Drain Charge Q - 1.8 - nC gd Turn-On Delay Time t - 3.41 - ns D(on) Turn-On Rise Time - 6.18 - ns t V = 15V, V = 10V, r DD GS Turn-Off Delay Time t - 13.92 - ns R = 2.6, R = 3 D(off) L G Turn-Off Fall Time t - 2.84 - ns f Notes: 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing. 30 20 V = 8.0V GS V = 4.5V GS 25 V = 5V 16 DS V = 4.0V GS 20 12 15 V = 3.5V GS 8 10 T = 150C A T = 125C A V = 3.0V GS 4 T = 85C A 5 T = 25C A V = 2.8V GS T = -55C A V = 2.5V GS 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 V , DRAIN-SOURCE VOLTAGE (V) V , GATE SOURCE VOLTAGE (V) DS GS Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics 2 of 6 July 2009 DMG6402LDM Diodes Incorporated www.diodes.com Document number: DS31839 Rev. 3 - 2 NEW PRODUCT I, DRAIN CURRENT (A) D I, DRAIN CURRENT (A) D