DMG6601LVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Complementary MOSFET max I D Device V R max Package (BR)DSS DS(ON) T = +25C Low On-Resistance A Low Input Capacitance 55m V = 10V TSOT26 3.8A GS Q1 30V Fast Switching Speed 65m V = 4.5V TSOT26 3.6A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 110m V = -10V TSOT26 -2.5A GS Halogen and Antimony Free. Green Device (Note 3) Q2 -30V 142m V = -4.5V TSOT26 -2.1A GS Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET has been designed to minimize the on-state resistance Case: TSOT26 (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic,Gree Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Applications Terminals: Finish NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Backlighting Weight: 0.008 grams (approximate) Power Management Functions DC-DC Converters D1 D2 TSOT26 Q1 Q2 G1 1 6 D1 S2 2 5 S1 G1 G2 G2 3 4 D2 S1 S2 Top View Top View N-Channel P-Channel Device Schematic Ordering Information (Note 4) Part Number Case Packaging DMG6601LVT-7 TSOT26 3K/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG6601LVT Maximum Ratings - Q1 and Q2 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Q1 Q2 Units Drain-Source Voltage V 30 -30 V DSS Gate-Source Voltage V 12 12 V GSS Steady T = +25C 3.8 -2.5 A I A D State 3.0 -2 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 4.5 -3 A t<10s A I D 3.4 -2.3 T = +70C A Maximum Body Diode Forward Current (Note 6) I 1.5 -1.5 A S Pulsed Drain Current (Note 6) I 20 -15 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units 0.85 T = +25C A Total Power Dissipation (Note 5) P W D 0.54 T = +70C A Steady state 147 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 103 1.3 T = +25C A Total Power Dissipation (Note 6) P W D 0.83 T = +70C A Steady state 96 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 67 C/W Thermal Resistance, Junction to Case (Note 6) 36 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics - Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 30 - - V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current T = +25C I - - 1 A V = 30V, V = 0V J DSS DS GS Gate-Source Leakage - - 100 nA I V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.5 1 1.5 V V V = V , I = 250 A GS(th) DS GS D - 34 55 V = 10V, I = 3.4A GS D Static Drain-Source On-Resistance - 38 65 m R V = 4.5V, I = 3A DS (ON) GS D 49 85 V = 2.5V, I = 2A GS D Forward Transfer Admittance Y - 6 - S V = 5V, I = 3.4A fs DS D Diode Forward Voltage (Note 7) V - 0.75 1.0 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C - 422 - pF iss V = 15V, V = 0V, DS GS Output Capacitance C - 41 - pF oss f = 1.0MHz Reverse Transfer Capacitance C - 39 - pF rss Gate resistance R 1.26 - V = 0V, V = 0V, f = 1.0MHz g DS GS - 5.4 - nC Total Gate Charge (V = 4.5V) Q GS g 12.3 - nC Total Gate Charge (V = 10V) Q V = 10V, V = 15V, GS g GS DS Gate-Source Charge - 0.8 - nC I = 3.1A Q D gs Gate-Drain Charge Q - 1.2 - nC gd Turn-On Delay Time t - 1.6 - ns D(on) Turn-On Rise Time t - 7.4 - ns V = 15V, V = 10V, r DS GS Turn-Off Delay Time t - 31.2 - ns R = 4.7, R =3 , D(off) L G Turn-Off Fall Time t - 15.6 - ns f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 9 August 2013 DMG6601LVT Diodes Incorporated www.diodes.com Document number: DS35405 Rev. 4 - 2 ADVANCE INFORMTION