DMG6968UQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I Max D BV R Max DSS DS(ON) Low-Input Capacitance T = +25C A Fast Switching Speed 20V 25m V = 4.5V 6.5A GS ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) The DMG6968UQ is suitable for automotive applications requiring specific change control and is AEC-Q101 qualified, is PPAP capable, and is manufactured in IATF16949:2016 certified facilities. Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Case: SOT23 automotive applications. It is qualified to AEC-Q101, supported by a Case Material: Molded Plastic, Green Molding Compound. PPAP and is ideal for use in: UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Power-Management Functions e3 Solderable per MIL-STD-202, Method 208 DC-DC Converters Terminals Connections: See Diagram Below Motor Control Weight: 0.009 grams (Approximate) D SOT23 D G S G ESD-Protected Gate Gate Protection Top View S Diode Top View Pin-out Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMG6968UQ-7 SOT23 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMG6968UQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 6.5 A Continuous Drain Current (Note 5) I A D State 5.2 T = +70C A Pulsed Drain Current 30 A I DM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) P 1.3 W D Thermal Resistance, Junction to Ambient T = +25C R 157 C/W A JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage 20 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1.0 A V = 20V, V = 0V J DSS DS GS Gate-Source Leakage I 10 A V = 10V, V = 0V GSS GS DS Gate-Source Breakdown Voltage BV 12 V V = 0V, I = 250A GSS DS G ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V 0.5 0.9 V V = V , I = 250A GS(TH) DS GS D 21 25 V = 4.5V, I = 6.5A GS D Static Drain-Source On-Resistance R 23 29 m V = 2.5V, I = 5.5A DS(ON) GS D 28 36 V = 1.8V, I = 3.5A GS D Forward Transfer Admittance 8 S Y V = 10V, I = 5A fs DS D DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance 151 pF C iss V = 10V, V = 0V DS GS Output Capacitance 91 pF C oss f = 1.0MHz Reverse Transfer Capacitance 32 pF C rss Total Gate Charge Q 8.5 nC g Gate-Source Charge Q 1.6 nC V = 4.5V, V = 10V, I = 6.5A gs GS DS D Gate-Drain Charge Q 2.8 nC gd Turn-On Delay Time 54 ns t D(ON) Turn-On Rise Time 66 ns t V = 10V, V = 4.5V, R DD GS Turn-Off Delay Time 613 ns R = 10, R = 6, I = 1A t L G D D(OFF) Turn-Off Fall Time 205 ns t F Notes: 5. Device mounted on 1 1 FR-4 PCB with high-coverage 2oz copper, single sided. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 6 DMG6968UQ August 2019 Diodes Incorporated www.diodes.com Document number: DS42175 Rev. 1 - 2