DMG7430LFG Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low R ensures on state losses are minimized DS(ON) I max D V R max (BR)DSS DS(ON) Small form factor thermally efficient package enables higher T = 25C A density end products 11m V = 10V 10.5A GS Occupies just 33% of the board area occupied by SO-8 enabling 30V smaller end product 15m V = 4.5V 9.2A GS Green component and RoHS compliant (Note 1) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance Case: POWERDI 3333-8 (R ) and yet maintain superior switching performance, making it DS(on) Case Material: Molded Plastic,Gree Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminal Connections Indicator: See diagram Power Management Functions Terminals: Finish NiPdAu over Copper leadframe. Solderable DC-DC Converters per MIL-STD-202, Method 208 Weight: 0.072 grams (approximate) POWERDI 3333-8 1 8 Pin 1 S S S 7 G 2 6 3 D D 5 4 D D Top View Bottom View Top View Internal Schematic Ordering Information (Note 2) Part Number Case Packaging DMG7430LFG-7 2000/Tape & Reel POWERDI 3333-8 DMG7430LFG-13 3000/Tape & Reel POWERDI 3333-8 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2). All applicable RoHS exemptions applied. 2. For packaging details, go to our website at DMG7430LFG Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage 20 V V GSS Steady T = 25C 10.5 A A I D State 8.5 T = 70C A Continuous Drain Current (Note 4) V = 10V GS T = 25C 14 A t<10s I A D 11 T = 70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I 90 A DM Maximum Continuous Body Diode Forward Current (Note 4) 3.0 A I S Avalanche Current (Note 5) L = 0.1mH 22 A I AR Repetitive Avalanche Energy (Note 5) L = 0.1mH 24 mJ E AR Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Units Steady state 0.9 Total Power Dissipation (Note 3) P W D t<10s 1.5 Steady state 142 Thermal Resistance, Junction to Ambient (Note 3) R C/W JA t<10s 78 Steady state 2.2 Total Power Dissipation (Note 4) W P D t<10s 3.5 Steady state 59 Thermal Resistance, Junction to Ambient (Note 4) R JA t<10s 33 C/W Thermal Resistance, Junction to Case (Note 4) 11 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG 100 100 P = 10s W Single Pulse 90 R = 140C/W R JA DS(on) R = r * R Limited JA(t) (t) JA 80 T - T = P * R JA JA(t) 10 70 DC 60 P = 10s W P = 1s 1 W 50 P = 100ms W 40 P = 10ms W P = 1ms W 30 P = 100s W 0.1 20 10 0 0.01 0.0001 0.001 0.01 0.1 1 10 100 1,000 0.01 0.1 1 10 100 V , DRAIN-SOURCE VOLTAGE (V) t1, PULSE DURATION TIME (sec) DS Fig. 1 Single Pulse Maximum Power Dissipation Fig. 2 SOA, Safe Operation Area POWERDI is a registered trademark of Diodes Incorporated 2 of 7 February 2012 DMG7430LFG Diodes Incorporated www.diodes.com Document number: DS35497 Rev. 5 - 2 ADVANCE INFORMATION P , PEAK TRANSIENT POIWER (W) (PK) I, DRAIN CURRENT (A) D