DMG8601UFG DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: U-DFN3030-8 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminals: Finish - NiPdAu over Copper lead frame. Solderable ESD Protected Up To 2KV e4 per MIL-STD-202, Method 208 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Polarity: See Diagram Halogen and Antimony Free. Green Device (Note 3) Weight: 0.0172 grams (approximate) Qualified to AEC-Q101 Standards for High Reliability 56 7 8 8 7 6 5 U-DFN3030-8 D1/D2 G2 S2 G1 S1 43 2 1 1 2 3 4 Bottom View Top View Bottom View Top View ESD PROTECTED TO 2kV Pin Configuration Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMG8601UFG-7 U-DFN3030-8 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG8601UFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS 12 V Steady TA = +25C 6.1 Continuous Drain Current (Note 5) ID A State TA = +70C 5.2 Pulsed Drain Current IDM 27 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 0.92 W Thermal Resistance, Junction to Ambient TA = +25C RJA 136 C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage 20 - - V BV V = 0V, I = 250 A DSS GS D - - 1.0 Zero Gate Voltage Drain Current T = 25C I A V = 20V, V = 0V J DSS DS GS Gate-Source Leakage I - - 10 A V = 10V, V = 0V GSS GS DS Gate-Source Breakdown Voltage BV 12 - - V V = 0V, I = 250A SGS DS G ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V 0.35 - 1.05 V V = V , I = 250 A GS(th) DS GS D V = 4.5V, I = 6.5A GS D - 17 23 Static Drain-Source On-Resistance R - 20 27 m V = 2.5V, I = 5.5A DS (ON) GS D - 25 34 V = 1.8V, I = 3.5A GS D Forward Transfer Admittance Y - 10 - S V = 10V, I = 5A fs DS D Diode Forward Voltage - 0.7 1.0 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS Input Capacitance - 143 - pF C iss V = 10V, V = 0V, DS GS Output Capacitance - 74 - pF C oss f = 1.0MHz Reverse Transfer Capacitance - 29 - pF C rss - 202 - Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 8.8 Total Gate Charge Q - - nC g V = 4.5V, V = 10V, GS DS 1.4 Gate-Source Charge Q - - nC gs I = 6.5A D 3.0 Gate-Drain Charge Q - - nC gd 53 Turn-On Delay Time t - - ns D(on) Turn-On Rise Time t - 78 - ns r V = 10V, V = 4.5V, DD GS Turn-Off Delay Time - 562 - ns R = 10 , R = 6 t L G D(off) Turn-Off Fall Time - 234 - ns t f Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout. 6. Short duration pulse test used to minimize self-heating effect. 2 of 6 September 2012 DMG8601UFG Diodes Incorporated www.diodes.com Document number: DS31788 Rev. 5 - 2 NEW PRODUCT