DMG8822UTS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: TSSOP-8L Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020D Low Input/Output Leakage Terminal Connections: See Diagram Below Lead Free By Design/RoHS Compliant (Note 3) Marking Information: See Page 4 Gree Device (Note 4) Ordering Information: See Page 4 Qualified to AEC-Q101 Standards for High Reliability Weight: 0.039 grams (approximate) D1 D2 G1 G2 1 8 D D S1 S2 2 7 S1 S2 3 6 G1 G2 4 5 S1 S2 Top View Internal Schematic TOP VIEW BOTTOM VIEW Pin Configuration Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage 8 V V GSS Steady T = 25C 4.9 A Continuous Drain Current (Note 1) A I D State 3.9 T = 70C A Pulsed Drain Current (Note 2) I 31 A DM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 1) 0.87 W P D Thermal Resistance, Junction to Ambient T = 25C R 143 C/W A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 1. Device mounted on FR-4 PCB with minimum recommended pad layout. 2. Repetitive rating, pulse width limited by junction temperature. 3. No purposefully added lead. 4. Diodes Inc. sGree policy can be found on our website at DMG8822UTS Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BV 20 - - V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current I - - 1.0 A V = 20V, V = 0V DSS DS GS Gate-Source Leakage I - - 100 nA V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V 0.5 - 0.9 V V = V , I = 250 A GS(th) DS GS D V = 4.5V, I = 8.2A GS D 19 25 Static Drain-Source On-Resistance - 22 29 m R V = 2.5V, I = 3.3A DS (ON) GS D 28 37 V = 1.8V, I = 2.0A GS D Forward Transfer Admittance - 7 - S Y V = 10V, I = 4A fs DS D Diodes Forward Voltage V - 0.7 0.9 V Is = 2.25A, V = 0V SD GS DYNAMIC CHARACTERISTICS (Note 6) - 841 - Input Capacitance C pF iss V = 10V, V = 0V, DS GS - 88 - Output Capacitance C pF oss f = 1.0MHz - 81 - Reverse Transfer Capacitance C pF rss - 1.24 - Gate Resistance R V =0V, V = 0V, f = 1MHz g DS GS SWITCHING CHARACTERISTICS - 9.6 - Total Gate Charge Q nC g V = 4.5V, V = 10V, GS DS - 1.4 - Gate-Source Charge Q nC gs I = 8.2A D Gate-Drain Charge Q - 2.1 - nC gd Turn-On Delay Time - 7.8 - ns t D(on) Turn-On Rise Time - 21.1 - ns t V = 10V, V = 4.5V, r DD GS Turn-Off Delay Time - 38.6 - ns R = 10 , R = 6 t L G D(off) Turn-Off Fall Time - 10.1 - ns t f Notes: 5. Short duration pulse test used to minimize self-heating effects. 6. Guaranteed by design. Not subject to production testing. 20 30 V = 4.5V V = 2.0V GS GS V = 3.5V GS V = 3.0V GS V = 5V DS 15 V = 2.8V GS V = 1.8V V = 2.5V GS 20 GS 10 10 T = 150C V = 1.5V A GS 5 T = 125C A T = 85C A T = 25C A T = -55C A 0 0 0 0.5 1 1.5 2 0 0.5 1 1.5 2 2.5 3 V , DRAIN-SOURCE VOLTAGE (V) V , GATE SOURCE VOLTAGE (V) DS GS Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics 2 of 6 June 2009 DMG8822UTS Diodes Incorporated www.diodes.com Document number: DS31798 Rev. 2 - 2 NEW PRODUCT I, DRAIN CURRENT (A) D I, DRAIN CURRENT (A) D