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X-On Electronics has gained recognition as a prominent supplier of DMG8880LSS-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMG8880LSS-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMG8880LSS-13 Diodes Incorporated

DMG8880LSS-13 electronic component of Diodes Incorporated
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See Product Specifications
Part No.DMG8880LSS-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFET N-CHANNEL
Datasheet: DMG8880LSS-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.2118 ea
Line Total: USD 529.5 
Availability - 0
MOQ: 2500  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ : 2500
Multiples : 1
2500 : USD 0.2118
2500 : USD 0.2062
2500 : USD 0.2005
5000 : USD 0.1926
15000 : USD 0.1926
30000 : USD 0.1926

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Configuration
Series
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
 
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We are delighted to provide the DMG8880LSS-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMG8880LSS-13 and other electronic components in the MOSFETs category and beyond.

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Not Recommended for New Design Use DMG4406LSS DMG8880LSS N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SO-8 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminal Connections: See Diagram Below Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Weight: 0.072 grams (approximate) Qualified to AEC-Q101 Standards for High Reliability S D S D D S G D Top View Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMG8880LSS-13 SO-8 2500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See Not Recommended for New Design Use DMG4406LSS DMG8880LSS Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = 25C 11.6 A Continuous Drain Current (Note 5) A I D State 8.5 T = 70C A Pulsed Drain Current (Note 6) 80 A I DM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) 1.43 W P D 87 C/W Thermal Resistance, Junction to Ambient T = 25C (Note 5) R A JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 30 - - V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = 25C I - - 1.0 A V = 30V, V = 0V J DSS DS GS Gate-Source Leakage I - - 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1.0 1.5 2.0 V V = V , I = 250A GS(th) DS GS D V = 10V, I = 11.6A 7.0 10 GS D Static Drain-Source On-Resistance - m R DS (ON) 9.6 14 V = 4.5V, I = 10.7A GS D Diode Forward Voltage - 0.7 1.0 V V V = 0V, I = 2.1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance - 1289 - pF C iss V = 15V, V = 0V, DS GS Output Capacitance - 187 - pF C oss f = 1.0MHz Reverse Transfer Capacitance C - 162 - pF rss Gate Resistance - 0.97 - R V = 0V, V = 0V, f = 1MHz g DS GS V = 10V, V = 15V, GS DS Total Gate Charge at 10V Q - 27.6 - nC g I = 11.6A, I = 1.0mA D G Total Gate Charge at 5V - 14.4 - nC Q g V = 5V, V = 15V, GS DS Gate-Source Charge - 3.6 - nC Q gs I = 11.6A, I = 1.0mA D G Gate-Drain Charge - 4.9 - nC Q gd Turn-On Delay Time - 7.04 - ns t D(on) Turn-On Rise Time - 17.52 - ns t r V = 15V, V = 10V, DD GS Turn-Off Delay Time t - 36.13 - ns R = 11 , I = 11.6A D(off) GS D Turn-Off Fall Time t - 19.67 - ns f Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 May 2013 DMG8880LSS Diodes Incorporated www.diodes.com Document number: DS31948 Rev. 5 - 0 NEW PRODUCT

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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