Not Recommended for New Design Use DMG4406LSS DMG8880LSS N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SO-8 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminal Connections: See Diagram Below Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Weight: 0.072 grams (approximate) Qualified to AEC-Q101 Standards for High Reliability S D S D D S G D Top View Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMG8880LSS-13 SO-8 2500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See Not Recommended for New Design Use DMG4406LSS DMG8880LSS Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = 25C 11.6 A Continuous Drain Current (Note 5) A I D State 8.5 T = 70C A Pulsed Drain Current (Note 6) 80 A I DM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) 1.43 W P D 87 C/W Thermal Resistance, Junction to Ambient T = 25C (Note 5) R A JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 30 - - V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = 25C I - - 1.0 A V = 30V, V = 0V J DSS DS GS Gate-Source Leakage I - - 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1.0 1.5 2.0 V V = V , I = 250A GS(th) DS GS D V = 10V, I = 11.6A 7.0 10 GS D Static Drain-Source On-Resistance - m R DS (ON) 9.6 14 V = 4.5V, I = 10.7A GS D Diode Forward Voltage - 0.7 1.0 V V V = 0V, I = 2.1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance - 1289 - pF C iss V = 15V, V = 0V, DS GS Output Capacitance - 187 - pF C oss f = 1.0MHz Reverse Transfer Capacitance C - 162 - pF rss Gate Resistance - 0.97 - R V = 0V, V = 0V, f = 1MHz g DS GS V = 10V, V = 15V, GS DS Total Gate Charge at 10V Q - 27.6 - nC g I = 11.6A, I = 1.0mA D G Total Gate Charge at 5V - 14.4 - nC Q g V = 5V, V = 15V, GS DS Gate-Source Charge - 3.6 - nC Q gs I = 11.6A, I = 1.0mA D G Gate-Drain Charge - 4.9 - nC Q gd Turn-On Delay Time - 7.04 - ns t D(on) Turn-On Rise Time - 17.52 - ns t r V = 15V, V = 10V, DD GS Turn-Off Delay Time t - 36.13 - ns R = 11 , I = 11.6A D(off) GS D Turn-Off Fall Time t - 19.67 - ns f Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 May 2013 DMG8880LSS Diodes Incorporated www.diodes.com Document number: DS31948 Rev. 5 - 0 NEW PRODUCT