DMG9926UDM DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low Gate Charge Case: SOT-26 Low R : Case Material - Molded Plastic, Green Molding DS(ON) Compound. UL Flammability Classification Rating 94V-0 28m V = 4.5V GS Moisture Sensitivity: Level 1 per J-STD-020D 32m V = 2.5V GS Terminals: Finish Matte Tin annealed over Copper 40m V = 1.8V GS leadframe. Solderable per MIL-STD-202, Method 208 Low Input/Output Leakage Terminal Connections: See Diagram Lead Free By Design/RoHS Compliant (Note 3) Marking Information: See Page 4 Qualified to AEC-Q101 Standards for High Reliability Ordering Information: See Page 4 Gree Device (Note 4) Weight: 0.008 grams (approximate) SOT-26 D1 D2 S G 1 1 D/D D/D 1 2 1 2 G1 G2 G S 2 2 S1 S2 TOP VIEW Equivalent Circuit TOP VIEW Pin Configuration Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 8 V GSS Drain Current (Note 1) Continuous T = 25C 4.2 A I A D T = 70C 3.2 A Pulsed Drain Current (Note 2) 30 A I DM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit Total Power Dissipation (Note 1) P 0.98 W D Thermal Resistance, Junction to Ambient (Note 1) t 10s 128 C /W R JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 1. Device mounted on 1 x1 , FR-4 PC board with 2 oz. Copper and test pulse width t 10s. 2. Repetitive Rating, pulse width limited by junction temperature. 3. No purposefully added lead. 4. Diodes Inc sGree policy can be found on our website at DMG9926UDM Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition STATIC CHARACTERISTICS Drain-Source Breakdown Voltage BV 20 V I = 250A, V = 0V DSS D GS Zero Gate Voltage Drain Current I 1 A V = 20V, V = 0V DSS DS GS Gate-Body Leakage Current I 100 nA V = 0V, V = 8V GSS DS GS Gate Threshold Voltage V 0.5 0.9 V V = V , I = 250A GS(th) DS GS D V = 4.5V, I = 8.2A 22 28 GS D Static Drain-Source On-Resistance (Note 5) R 25 32 m V = 2.5V, I = 3.3A DS (ON) GS D 31 40 V = 1.8V, I = 2.0A GS D Forward Transfer Admittance Y 7 S V = 10V, I = 4A FS DS D Diode Forward Voltage (Note 5) V 0.7 0.9 V I = 2.25A, V = 0V SD S GS DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance 856 pF C iss V = 10V, V = 0V DS GS Output Capacitance 83 pF C oss f = 1.0MHz Reverse Transfer Capacitance C 78 pF rss Gate Resisitance R 1.32 V = 0V, V = 0V, f = 1MHz G GS DS SWITCHING CHARACTERISTICS Total Gate Charge Q 8.3 nC g Gate-Source Charge 1.3 nC Q V = 4.5V, V = 10V, I = 8.2A gs GS DS D Gate-Drain Charge 3.1 nC Q gd Turn-On Delay Time t 8.4 ns D(on) Turn-On Rise Time t 8.2 ns r V = 10V, V = 4.5V, DD GS Turn-Off Delay Time t 40.4 ns R = 10, R = 6 D(off) L G Turn-Off Fall Time t 8.9 ns f Notes: 5. Test pulse width t = 300ms. 6. Guaranteed by design. Not subject to production testing. 30 20 25 V = 8.0V GS V = 5V 16 DS V = 4.5V GS V = 3.0V GS 20 V = 2.5V GS 12 V = 2.0V GS 15 8 10 T = 150C A V = 1.5V GS T = 125C A 4 T = 85C 5 A T = 25C A T = -55C A 0 0 0 0.4 0.8 1.2 1.6 2 0.5 1 1.5 2 V , DRAIN-SOURCE VOLTAGE (V) V , GATE SOURCE VOLTAGE (V) GS DS Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics 2 of 6 June 2009 DMG9926UDM Diodes Incorporated www.diodes.com Document number: DS31770 Rev. 4 - 2 NEW PRODUCT I, DRAIN CURRENT (A) D I, DRAIN CURRENT (A) D