DMG9926USD DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Low On-Resistance I max D V R max (BR)DSS DS(ON) Low Gate Threshold Voltage T = +25C A Low Input Capacitance 24m V = 4.5V GS 8A Fast Switching Speed 29m V = 2.5V Low Input/Output Leakage 20V GS 5.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 37m V = 1.8V 4.8A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This MOSFET has been designed to minimize the on-state Mechanical Data resistance (R ) and yet maintain superior switching DS(on) performance, making it ideal for high efficiency power management Case: SO-8 applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Applications Terminals Connections: See Diagram Power Management Functions Terminals: Finish - Matte Tin annealed over Copper lead DC-DC Converters frame. Solderable per MIL-STD-202, Method 208 Weight: 0.072g (approximate) D1 D2 S1 D1 G1 D1 G1 G2 S2 D2 G2 D2 S1 S2 TOP VIEW TOP VIEW N-Channel MOSFET N-Channel MOSFET Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMG9926USD-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG9926USD Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 8 V GSS Drain Current (Note 5) Steady T = +25C 8 A I A D State 6.7 T = +70C A Pulsed Drain Current (Note 6) 30 A I DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.3 W P D Thermal Resistance, Junction to Ambient R 96 C/W JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic SymbolMin Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 20V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.5 0.9 V V V = V , I = 250 A GS(th) DS GS D V = 4.5V, I = 8.2A 19 24 GS D Static Drain-Source On-Resistance 23 29 m R V = 2.5V, I = 3.3A DS (ON) GS D 29 37 V = 1.8V, I = 2A GS D Forward Transfer Admittance Y 7 S V = 10V, I = 4A fs DS D Diode Forward Voltage V 0.5 0.9 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 867 pF iss V = 15V, V = 0V DS GS Output Capacitance C 85 pF oss f = 1MHz Reverse Transfer Capacitance C 81 pF rss Gate Resistance R 1.29 V = 0V, V = 0V, f = 1MHz G GS DS SWITCHING CHARACTERISTICS (Note 8) Total Gate Charge Q 8.8 nC g Gate-Source Charge 1.2 nC Q V = 4.5V, V = 10V, I = 8.2A gs GS DS D Gate-Drain Charge 3 nC Q gd Turn-On Delay Time 13.2 ns t d(on) Turn-On Rise Time 12.6 ns t V = 10V, V = 4.5V, r DD GS Turn-Off Delay Time t 64.8 ns R = 10 , R = 6 d(off) L G Turn-Off Fall Time t 21.7 ns f Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by function temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 February 2014 DMG9926USD Diodes Incorporated www.diodes.com Document number: DS31757 Rev. 5 - 2 NEW PRODUCT