DMG9933USD DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I max D V R max (BR)DSS DS(on) Low Input Capacitance T = +25C A Fast Switching Speed 75m V = -4.5V -4.6A GS -20V Low Input/Output Leakage 110m V = -2.5V -2.9A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 standards for High Reliability This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for Mechanical Data high efficiency power management applications. Case: SO-8 Case Material: Molded Plastic, Green Molding Compound. Applications UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminal Connections: See Diagram Below Power Management Functions Marking Information: See Page 4 DC-DC Converters Ordering Information: See Page 4 Weight: 0.072 grams (approximate) SO-8 D D 1 2 S1 D1 G1 D1 G G 1 2 S2 D2 G2 D2 S S 1 2 Top View Top View Internal Schematic P-Channel MOSFET P-Channel MOSFET Ordering Information (Note 4) Part Number Case Packaging DMG9933USD-13 SO-8 2,500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG9933USD Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -20 V DSS 12 Gate-Source Voltage V V GSS Steady T = +25C -4.6 A Continuous Drain Current (Note 5) V = -4.5V I A GS D State -3 T = +85C A Pulsed Drain Current (Note 6) -20 A I DM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) P 1.15 W D Thermal Resistance, Junction to Ambient T = +25C R 109 C/W A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by junction temperature. Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -20 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = +25C I -1 A V = -16V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -0.45 -1.1 V V = V , I = -250A GS(th) DS GS D V = -4.5V, I = -4.8A 55 75 GS D Static Drain-Source On-Resistance m R DS (ON) 76 110 V = -2.5V, I = -1A GS D Forward Transfer Admittance Y 10 S V = -9V, I = -3.4A fs DS D Diode Forward Voltage -0.8 -1.2 V V V = 0V, I = -2A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 608.4 pF C iss V = -6V, V = 0V DS GS Output Capacitance 81.5 pF C oss f = 1MHz Reverse Transfer Capacitance 72.4 pF C rss Gate Resistance R 44.91 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge Q 6.5 nC g V = -10V, V = -4.5V, DS GS Gate-Source Charge Q 0.9 nC gs I = -3.2A D Gate-Drain Charge Q 1.5 nC gd Turn-On Delay Time t 12.45 ns D(on) Turn-On Rise Time t 10.29 ns r V = -10V, V = -4.5V, DS GS Turn-Off Delay Time 46.52 ns R = 10 , R = 1 , I = -1A t L G D D(off) Turn-Off Fall Time 22.19 ns t f Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 July 2014 DMG9933USD Diodes Incorporated www.diodes.com Document number: DS32085 Rev. 3 - 2 NEW PRODUCT