DMHC10H170SFJ 100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Features Low On-Resistance I D Device BV R DSS DS(ON) MAX Low Input Capacitance T = +25C A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 2.9A 160m V = 10V GS Q1 & Q4 100V Halogen and Antimony Free. Green Device (Note 3) 2.6A 200m V = 4.5V GS Qualified to AEC-Q101 Standards for High Reliability 250m V = -10V -2.3A GS Q2 & Q3 -100V -2.1A 300m V = -4.5V GS Mechanical Data Case: V-DFN5045-12 Case Material: Molded Plastic, Green Molding Compound. Description UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 This new generation MOSFET is designed to minimize the on-state Terminal Connections: See Diagram resistance (R ) and yet maintain superior switching performance, DS(ON) making it ideal for high-efficiency power management applications. Terminals: Finish NiPdAu over Copper Leadframe. e4 Solderable per MIL-STD-202, Method 208 Weight: 0.056 grams (Approximate) Applications High-Efficiency Bridge Rectifiers S3 7 Q3 (Pch) Q2 (Pch) 6 S2 Pin 1 Pin Pin V-DFN5045-12 Out Out 8 5 S3 S2 G1 S1 Pin Pin S1 G2 S2 S2 Out 4 Out G3 9 G2 D1/D2 Pin Pin D1/D2 OuS4t OuS1t 10 3 Q4 (Nch) Q1 (Nch) D3/D4 Pin Pin D3/D4 Out 11 2 Out S4 S1 Pin Pin G4 S4 S4 OuG4t 12 1 OuG1t G3 S3 S3 Pin Pin Out Out D3,D4 to backside D1,D2 to backside Bottom View Top View Internal Schematic Ordering Information (Note 4) Part Number Case Tape Width Packaging DMHC10H170SFJ-13 V-DFN5045-12 12mm 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMHC10H170SFJ Maximum Ratings Q1 & Q4 N-Channel ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 2.9 A Continuous Drain Current (Note 5) V = 10V I A GS D State 2.3 T = +70C A Maximum Body Diode Forward Current (Note 5) 2.5 A I S Pulsed Drain Current (10s pulse, Duty Cycle = 1%) 13 A I DM Maximum Ratings Q2 & Q3 P-Channel ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -100 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C -2.3 A Continuous Drain Current (Note 5) V = -10V I A GS D State -1.9 T = +70C A Maximum Body Diode Forward Current (Note 5) -2.4 A I S Pulsed Drain Current (10s pulse, Duty Cycle = 1%) -11 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 2.1 W A D Thermal Resistance, Junction to Ambient (Note 5) 60 R JA C/W Thermal Resistance, Junction to Case (Note 5) 6 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Note: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 2 of 9 January 2016 DMHC10H170SFJ Diodes Incorporated www.diodes.com Document number: DS37571 Rev. 3 - 2 ADVANCE INFORMATION ADVANCED INFORMATION